Si(111)衬底切偏角对GaN基LED外延膜的影响

利用金属有机化学气相沉积(MOCVD)方法在具有偏角(0°~0.9°)的Si(111)衬底上生长了GaN薄膜.采用高分辨X射线衍射(HRXRD)对Si衬底的偏角进行了精确的测量,利用HRXRD、原子力显微镜(AFM)以及光致发光(PL)对外延薄膜的晶体质量、量子阱中In组分、表面形貌及光学特性进行了研究.结果表明,Si(111)衬底偏角对量子阱中的In组分、 GaN外延膜的表面形貌、晶体质量以及光学性能具有重大影响.为了获得高质量的GaN外延薄膜,衬底偏角必须控制在小于0.5°的范围内.超出该范围,GaN薄膜的晶体质量、表面形貌及光学性能都明显下降.

Abstract

GaN-based LED films were grown on Si(111) substrate with different miscut angle from 0° to 0.9° by MOCVD.The miscut angles of Si(111) substrates were precisely measured by high resolution X-ray diffraction (HRXRD).The morphologies of the samples were characterized by atomic force microscopy (AFM).The GaN crystal quality and indium content of MQWs were analyzed by HRXRD.The optical properties of the samples were investigated by photoluminescence (PL).The results reveal that the miscut of Si(111) substrate has significant influence on the crystal quality,surface morphology and optical properties of GaN film.The optimal miscut angle of Si(111) substrate is within 0.5°.Beyond this range,the crystal quality,surface morphology and optical properties of GaN film will deteriorate drastically.

参考文献

[1] Xiong Y J,Zhang M,Xiong C B,et al.Investigation of strain of GaN light-emitting diode films transferred to metal substrate from Si (111)[J].Chin.J.Lumin.(发光学报),2010,31(4):531-537 (in Chinese).

[2] Tao X X,Wang L,Liu Y S,et al.Effects of the thickness of p-type GaN on light extraction of GaN based vertical light emitting diodes on silicon substrate[J].Chin.J.Lumin.(发光学报),2011,32(10):1069-1073 (in Chinese).

[3] Liu W H,Li Y Q,Fang W Q,et al.The junction temperature characteristic of GaN light emitting diodes on Si substrate[J].Chin.J.Lumin.(发光学报),2006,27(2):211-214 (in Chinese).

[4] Xiao Y P,Mo C L,Qiu C,et al.The aging characteristics of GaN-based blue LED on Si substrate[J].Chin.J.Lumin.(发光学报),2010,31(3):364-368 (in Chinese).

[5] Nakamura S.GaN growth using GaN buffer layer[J].Jpn.J.Appl.Phys.,1991,30(10A):1705-1707.

[6] Yamada H,Iso K,Saito M,et al.Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes[J].Jpn.J.Appl.Phys.,2007,46(12L):1117-1119.

[7] Ishibashi A,Takeishi H,Uemura N,et al.Metalorganic vapor phase epitaxy growth of a high-quality GaN/InGaN single quantum well structure using a misoriented SiC substrate[J].Jpn.J.Appl.Phys.,1997,36(3S):1961-1965.

[8] Shen X Q,Matsuhata H,Okumura H.Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates[J].Appl.Phys.Lett.,2005,86(2):021912-1-3.

[9] Bae S Y,Lee D S,Kong B H,et al.Electroluminescence enhancement of semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates[J].Curr.Appl.Phys.,2011,11(3):954-958.

[10] Wang L,Cui Z Y,Huang F S,et al.Influence of miscut angle of Si (111) substrates on the performance of InGaN LEDs[J].Appl.Phys.Express,2014,7(1):012102-1-3.

[11] Doucette L D,Da Pereira C M,Lad R J.Precise orientation of single crystals by a simple X-ray diffraction rocking curve method[J].Rev.Sci.Instrum.,2005,76(3):036106-1-4.

[12] Kong H S,Glass J T,Davis R F.Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates[J].J.Appl.Phys.,1988,64(5):2672-2679.

[13] Kimoto T,Nishino H,Yoo W S,et al.Growth mechanism of 6H-SiC in step controlled epitaxy[J].J.Appl.Phys.,1993,73(2):726-732.

[14] Heying B,Tarsa E J,Elsass C R,et al.Dislocation mediated surface morphology of GaN[J].J.Appl.Phys.,1999,85(9):6470-6476.

[15] Heinke H,Kirchner V,Einfeldt S,et al.X-ray diffraction analysis of the defect structure in epitaxial GaN[J].Appl.Phys.Lett.,2000,77(14):2145-2147.

[16] Ning X J,Chien F R,Pirouz P,et al.Growth defects in GaN films on sapphire: The probable origin of threading dislocations[J].J.Mater.Res.,1996,11(3):580-592.

[17] Leszczynski M,Czernecki R,Krukowski S,et al.Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy[J].J.Cryst.Growth,2011,318(1):496-499.

[18] Krｓ'ko M,Franssen G,Suski T,et al.Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates[J].Appl.Phys.Lett.,2007,91(21):211904-1-3.

武芹, 全知觉, 王立, 刘文, 张建立, 江风益. Si(111)衬底切偏角对GaN基LED外延膜的影响[J]. 发光学报, 2015, 36(4): 466. WU Qin, QUAN Zhi-jue, WANG Li, LIU Wen, ZHANG Jian-li, JIANG Feng-yi. Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)[J]. Chinese Journal of Luminescence, 2015, 36(4): 466.

Si(111)衬底切偏角对GaN基LED外延膜的影响

关于本站 Cookie 的使用提示

全站搜索

Si(111)衬底切偏角对GaN基LED外延膜的影响

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索