[1] Smith B W, Cashmore J S. Challenges in high NA, polarization, and photoresists. Proc. SPIE, 2002, 4691：11～24

[2] Geert Vandenberghe. ArF Lithography Options for 100nm Technologies Semiconductor Fabtech 2001, 14:157～165

[3] Bert Vleeming, Barbra Heskamp, Hans Bakker et al.. ArF step-and-scan system with 0.75 NA for the 0.10um node. Proc. SPIE, 2001, 4346: 634～650

[4] Paul Graeupner, Reiner B G, Aksel Goehnermeier et al.. Impact of wavefront errors on low k1 processes at extremely high NA. Proc. SPIE, 2003, 5040: 119～130

[5] Malacara D. Optical Shop Testing. New York: Wiley, 1978. 489～505

[6] Grosso R, Crane R. Precise Optical Evaluation Using Phase Measuring Interferometry. Proc. SPIE, 1979, 192: 65～74

[7] van den Brink M A, de Mol C G M, George R A. Matching performance for multiple steppers using an advanced metrology procedure. Proc SPIE, 1988, 921:180～197

[8] Peter Dirksen, Walter de Laat, Henry J M. Latent image metrology for production wafer steppers. Proc SPIE, 1995, 2440: 701～711

[9] Raab E L, Pierrat C, Fields C H et al.. Analyzing deep-uv lens aberrations using aerial image and latent image metrologies. Proc. SPIE, 1994, 2197: 550～565

[10] Gerard de Zwart, Martin A. van den Brink, Richard A. George et al.. Performance of a step-and-scan system for DUV lithography. Proc. SPIE, 1997, 3051: 817～835

[11] Van der Laan, Hans, Dierichs et al.. Aerial image measurement methods for fast aberration set-up and illumination pupil verification. Proc. SPIE, 2001, 4346: 394～407

[12] Boudewijn G S, Tom Castenmiller, Richard du Croo de Jongh et al.. Performance results of a new generation of 300-mm lithography systems. Proc. SPIE, 2001, 4346: 544～557

[13] Van den Brink, Martin A, Franken H et al.. Automatic on-line wafer stepper calibration system. Proc. SPIE, 1990, 1261: 298～314

[14] Joost Sytsma, Hans van der Laan, Marco Moers et al.. Improved Imaging Metrology Needed for Advanced Lithography. Semiconductor international 2001, 4

[15] Hans van der Laan, Marco H Moers. US patent, 6646729, 2003

[16] Peter Dirksen, Juffermans C A, Pellens R J et al.. Novel aberration monitor for optical lithography. Proc. SPIE, 1999, 3679: 77～86

[17] Peter Dirksen, Juffermans C A, Engelen A et al.. Impact of high-order aberrations on the performance of the aberration monitor. Proc. SPIE, 2000, 4000: 9～17

[18] Moers M H, Hans van der Laan, Mark Zellenrath et al.. Application of the aberration ring test (ARTEMIS) to determine lens quality and predict its lithographic performance. Proc. SPIE, 2001, 4346: 1379～1387

[19] Garza C M , Conley W, Roman B J et al.. Ring test aberration determination and device lithography correlation Proc. SPIE, 2001, 4346: 36～44