利用湿法腐蚀提高红光LED外延片的发光效率

王建军; 郑克宁; 杨利营; 印寿根

半导体光电, 2014, 35 (4): 594, 网络出版: 2014-09-01

利用湿法腐蚀提高红光LED外延片的发光效率

Enhancement of Extraction Efficiency of Red LED via Wet Surface Roughening

论文大纲

王建军 ^1,2,3郑克宁 ^1,2,3杨利营 ^1,2,3印寿根 ^1,2,3,*

作者单位

¹ 天津理工大学材料科学与工程学院

² 天津理工大学显示材料与光电器件教育部重点实验室

³ 天津理工大学天津市光电显示材料与器件重点实验室, 天津300384

摘要

采用熔融态的KOH对AlGaInP基红光LED外延片进行了表面粗化处理。研究了粗化温度、粗化时间对LED外延片表面形貌的影响, 并利用原子力显微镜(AFM)、半导体芯片自动测试系统对LED器件的相关性能(形貌、IV特性曲线、亮度和主波长)进行了表征。比较了粗化前后的LED亮度和电流特性变化。测试结果表明: 利用熔融态的KOH对AlGaInP基红光LED外延片进行表面粗化可以有效地抑制光在通过LED表面与空气接触界面时产生的全反射, 得到性能更好的器件。实验结果显示, 采用熔融态KOH, 在粗化温度为200℃、粗化时间为8min时, 能使制作的红光LED外延片发光效率提高30%。

Abstract

In this paper, the surface of red LED epitaxial wafer was roughened with molten KOH. The effects of molten KOH at different temperature and different roughening time on the surface morphology of the LED epitaxial wafer were analyzed. And the performance indexes such as morphology, IV characteristic curves, brightness and dominant wavelength, of LED devices were characterized by atomic force microscope and semiconductor chip automatic characterization system. The brightness and current characteristics of LED devices before and after roughening were compared. The results show that using molten KOH to rough LED epitaxial wafers can effectively suppress the total reflection of the light passing through the interface of LED surface and air. Experimental results show that the luminous efficiency of the red LED epitaxial wafer is improved by about 30% after being etched in 200℃ molten KOH for 8min.

参考文献

[1] Lee Y J,Kuo H C, Wang S C, et al. Increasing the extraction efficiency of AlGaInP LEDs via nside surface roughening[J]. IEEE Photon. Technol. Lett., 2005, 17(11): 2289-2291.

[2] 巩海波,郝霄鹏, 夏伟, 等. ITO掩模干法粗化GaP提高红光LED的提取效率[J]. 光电子激光, 2010, 21(9): 1287-1290.

[3] 刘思南,邹德恕, 张剑铭, 等表面粗化提高红光LED的光提取效率[J]. 固体电子学研究与进展, 2008, 28(2): 245-247.

[4] 白继锋,高欣, 薄报学, 等. 湿法表面粗化提高倒装AlGaInP LED外量子效率[J]. 半导体光电, 2012, 33(2): 188.

[5] 尹以安,王维韵, 王后锦, 等. 湿法腐蚀GaP对LED性能的影响[J]. 半导体技术, 2013(2): 007.

[6] 李慧,李培咸,史会芳,等. 表面粗化提高绿光LED的光提取效率[J]. 电子科技,2010(6):25-28.

[7] 李慧.表面粗化提高GaN基LED光提取效率[D].西安: 西安电子科技大学,2010.

[8] Huang H W,Kao C C, Chu J T, et al. Improvement of InGaNGaN lightemitting diode performance with a nanoroughened pGaN surface[J]. IEEE Photon. Technol. Lett., 2005, 17(5): 983-985.

[9] Na S I,Ha G Y. Selective wet etching of pGaN for efficient GaNbased lightemitting diodes[J]. IEEE Photon. Technol. Lett., 2006, 18(14): 1512-1514.

[10] Ha G Y,Park T Y, Kim J Y, et al. Improvement of reliability of GaNbased lightemitting diodes by selective wet etching with pGaN[J]. IEEE Photon. Technol. Lett., 2007, 19(11): 813-815.

王建军, 郑克宁, 杨利营, 印寿根. 利用湿法腐蚀提高红光LED外延片的发光效率[J]. 半导体光电, 2014, 35(4): 594. WANG Jianjun, ZHENG Kening, YANG Liying, YIN Shougen. Enhancement of Extraction Efficiency of Red LED via Wet Surface Roughening[J]. Semiconductor Optoelectronics, 2014, 35(4): 594.

利用湿法腐蚀提高红光LED外延片的发光效率

关于本站 Cookie 的使用提示

全站搜索

利用湿法腐蚀提高红光LED外延片的发光效率

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索