Preliminary study of the damage resistance of type I doubler KDP crystals at 532  nm

Yinbo Zheng; Lei Ding; Xinda Zhou; Rongsheng Ba; Jing Yuan; Honglei Xu; Xiaoyu Yang; Bo Chen; Jin Na; Yajun Li; Wanguo Zheng

doi:doi:10.3788/COL201614.051601

Chinese Optics Letters, 2016, 14 (5): 051601, Published Online: Aug. 6, 2018

Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm

Yinbo Zheng Lei Ding ^*Xinda Zhou Rongsheng Ba Jing Yuan Honglei Xu Xiaoyu Yang Bo Chen Jin Na Yajun Li Wanguo Zheng

Author Affiliations

Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

Figures & Tables

Fig. 1. Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.

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Fig. 2. Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around 7.76 J/cm2.

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Fig. 3. Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.

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Fig. 4. Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model^[8,19].

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Fig. 5. Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.

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Yinbo Zheng, Lei Ding, Xinda Zhou, Rongsheng Ba, Jing Yuan, Honglei Xu, Xiaoyu Yang, Bo Chen, Jin Na, Yajun Li, Wanguo Zheng. Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm[J]. Chinese Optics Letters, 2016, 14(5): 051601.

Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm

Fig. 1. Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.

Fig. 2. Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around 7.76 J/cm2.

Fig. 3. Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.

Fig. 4. Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model^[8,19].

Fig. 5. Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.

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Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm

Fig. 1. Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.

Fig. 2. Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around 7.76 J/cm2.

Fig. 3. Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.

Fig. 4. Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model[8,19].

Fig. 5. Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.

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Fig. 4. Relationship between laser-induced damage threshold and the radius of the precursor calculated from the nano absorber model^[8,19].