中国激光, 2002, 29 (3): 286, 网络出版: 2006-08-08
对硅片进行无抗蚀膜光化学蚀刻的一种新方法
A New Method of Resistless Photochemical Etching for Silicon Wafer
摘要
研究了一种在硅片上进行无抗蚀膜光化学蚀刻的新方法,使用过氧化氢(H2O2)和氟酸(HF)作为光化学媒质,使用ArF紫外激光作为光源,无需事先加工抗蚀膜,可直接在硅表面进行蚀刻.在H2O2与HF的浓度比为1.3时,蚀刻效果最佳,当激光能量密度为29 mJ/cm2, 照射脉冲数为10000次时,得到210 nm的蚀刻深度.
Abstract
A new method of resistless photochemical etching for silicon wafer is developed, which is using hydrogen peroxide (H 2O 2) and hydrogen fluoride (HF) as activated species, ArF ultraviolet laser as a photon source. Silicon wafer can be directly etched without photo-resists. When the concentration ratio of H 2O 2/HF is 1.3, the optimized etching was found. At the energy density of 29 mJ/cm 2 as well as the shot numbers of 10000, the maximum etching depth of 210 nm was obtained.
杨杰, 刘焰发, 村原正隆. 对硅片进行无抗蚀膜光化学蚀刻的一种新方法[J]. 中国激光, 2002, 29(3): 286. 杨杰, 刘焰发, 村原正隆. A New Method of Resistless Photochemical Etching for Silicon Wafer[J]. Chinese Journal of Lasers, 2002, 29(3): 286.