对硅片进行无抗蚀膜光化学蚀刻的一种新方法
[1] T. Hayakawa, T. Suzuki, T. Uesugi et al.. Mechanism of residue formation in silicon trench etching using a bromine-based plasma [J]. Jpn. J. Appl. Phys., 1998, 37(Part 1, 1):5～9
[2] K. Tachimana, H. Kamisugi, T. Kawasaki. Behavior of F atoms and CF2 radicals in fluorocarbon plasmas for SiO2/Si etching [J]. Jpn. J. Appl. Phys., 1999, 38(Part 1, 7B):4367～4372
[3] . R. Rakhshandehroo, J. W. Weigold, W.-C. Tian et al.. Dry etching of Si field emitters and high aspect ratio resonators using an inductively coupled plasma source[J]. J. Vac. Sci. Tech. B, 1998, 16(5): 2849-2854.
[4] . H. Yun, V. A. Burrows, M. N. Kozicki. Analysis of KOH etching of (100) silicon on insulator for the fabrication of nanoscale tips[J]. J. Vac. Sci. Tech. B, 1998, 16(5): 2844-2848.
[5] . B. Goetting, T. Deng, G. M. Whitesides. Microcontact printing of alkanephosphonic acids on aluminum: Pattern transfer by wet chemical etching[J]. Langmuir, 1999, 15(4): 1182-1191.
杨杰, 刘焰发, 村原正隆. 对硅片进行无抗蚀膜光化学蚀刻的一种新方法[J]. 中国激光, 2002, 29(3): 286. 杨杰, 刘焰发, 村原正隆. A New Method of Resistless Photochemical Etching for Silicon Wafer[J]. Chinese Journal of Lasers, 2002, 29(3): 286.
PDF全文
