中国激光, 2013, 40 (1): 0103003, 网络出版: 2012-12-05   

飞秒与纳秒激光刻蚀单晶硅对比研究 下载: 832次

Contrastive Study on Laser Ablation of Single-Crystal Silicon by 1030 nm Femtosecond Laser and 355 nm Nanosecond Laser
作者单位
华中科技大学光电子科学与工程学院武汉光电国家实验室, 湖北 武汉 430074
摘要
采用输出功率8 W的355 nm NdYVO4纳秒激光器和3 W的1030 nm飞秒激光器对0.4 mm的单晶硅的刻蚀进行了对比研究,研究了激光的单脉冲能量密度,脉冲宽度,脉冲耦合率等参数对加工质量和精度的影响。实验结果表明,飞秒激光加工的热效应要小于紫外纳秒激光,同时飞秒脉冲产生了纳米条纹,但随着加工次数的增加,纳米条纹也直接导致了不规则裂纹的产生。这说明飞秒激光的加工优越性也是有条件的,当需要对材料进行大量去除之类的加工时,成本相对较低的紫外纳秒激光可能更为适合。
Abstract
A 355 nm NdYVO4 nanosecond laser with output power of 8 W and a 1030 nm femtosecond laser with output power of 3 W are used for etching the single-crystal silicon. The effects of laser ablation parameters including laser fluence, pulse width spot overlap rate, and processing times on the processing accuracy and quality are investigated and analyzed. The heating effect of femtosecond laser is less than ultravialet nanosecond laser, and nanometer fringes are generated with the laser pulse of femtosecond level, but many cracks appear for the superposition of nanometer fringes as the processing times increases. The experimental results indicate that the advantage of femtosecond laser processing is not absolute, and relatively cheap ultraviolet nanosecond laser may be more suitable for the cases where plenty of materials need to be removed.
参考文献

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杨焕, 黄珊, 段军, 杜敏. 飞秒与纳秒激光刻蚀单晶硅对比研究[J]. 中国激光, 2013, 40(1): 0103003. Yang Huan, Huang Shan, Duan Jun, Du Min. Contrastive Study on Laser Ablation of Single-Crystal Silicon by 1030 nm Femtosecond Laser and 355 nm Nanosecond Laser[J]. Chinese Journal of Lasers, 2013, 40(1): 0103003.

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