GaAs半导体激光器线宽展宽因子的理论计算
[1] HENRY C H. Theory of the linewidth of semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 1982, 18(2): 259-264.
[2] VILLAFRANCA A, VILLAFRANCA A, GIULIANI A, et al. Mode-resolved measurements of the linewidth enhancement factor of a Fabry-Pérot laser[J]. IEEE Photonics Technology Letters, 2009, 21(17): 1256-1258.
[3] GERHARDT N C, HOFMANN M R, HADER J, et al. Linewidth enhancement factor and optical gain in (GaIn)(Nas)/GaAs lasers[J]. Applied Physics Letters, 2004, 84(1): 1-3.
[4] MACKENZIE R, LIM J J, BULL S, et al. Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 mm dilute nitride double-quantum-well lasers[J]. IET Optoelectron, 2007, 1(6): 284-288.
[5] MELNIK S, HUYET G, USKOV A. The linewidth enhancement factor α of quantum dot semiconductor lasers[J]. Optics Express, 2006, 14(7): 2950-2955.
[6] OHTOSHI T, CHINONE N. Linewidth enhancement factor in strained quantum well lasers[J]. IEEE Photonics Technology Letters, 1989, 1(6): 117-119.
[7] AGRAWAL G P, BOWDEN C M. Concept of linewidth enhancement factor in semiconductor lasers: its usefulness and limitations[J]. IEEE Photonics Technology Letters, 1993, 5(6): 640-642.
[8] SEO W H, DONEGAN J F. Linewidth enhancement factor of lattice-matched InGaNAs/GaAs quantum wells[J]. Apply Physics Letters, 2003, 82(4): 505-507.
[9] KANO F, YAMANAKA T, YAMAMOTO N, et al. Linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers[J]. IEEE Journal of Quantum Electronics, 1994, 30(2): 533-537.
[10] LEE S S, FIGUEROA L, RAMASWAMY R. Variations of linewidth enhancement factor and linewidth as a function of laser geometry in (A1Ga)As lasers[J]. IEEE Journal of Quantum Electronics, 1989, 25(5): 862-870.
[11] HUANG Y, ARAI S, KOMORI K. Theoretical linewidth enhancement factor α of Ga1-xInxAs/GaInAsP/InP strained-quantum-well structures[J]. IEEE Photonics Technology Letters, 1993, 5(2): 142-145.
[12] PARK S H. Linewidth enhancement factor of InGaNAs/InGaNAs quantum-well lasers and comparison with experiment[J]. Journal of the Korean Physical Society, 2004, 45(4): 1085-1088.
[13] HOCHHOLZER M, JORDAN V. Discussion of the linewidth enhancement factor α of GaAs/GaAlAs quantum well lasers[J]. IEE Proi-Optoelectron, 1994, 141(5):311-315.
[14] 彭宇恒, 陈松岩, 陈维友, 等. 调制掺杂压缩应变多量子阱激光器的增益特性和线宽增强因子的理论研究[J]. 电子学报, 1996, 24(11): 33-37.
PENG Yu-heng, CHENG Song-yan, CHEN Wei-you, et al. The theoretical analysis of gain and linewidth enhancement factor of modulation-doped compress strained multi-quantum-well lasers[J]. Acta Electronica Sinica, 1996, 24(11): 33-37.
[15] 杜宝勋. 半导体激光器原理[M]. 北京: 兵器工业出版社, 2004.
[16] 吕鸿昌, 罗斌, 陈建国. 半导体激光器谱线展宽因子测量[J]. 高技术通讯, 1996, 6(2): 12-14.
LU Hong-chang, LUO Bin, CHEN Jian-guo. Measurement of linewidth enhancement factor of semiconductor lasers[J]. High Technology Letters, 1996, 6(2): 12-14.
[17] 禹延光, 闫艳霞. 半导体激光器线宽展宽因数的估计方法[J]. 激光与红外, 2006, 36(2):114-117.
YU Yan-guang, YAN Yan-xia. An approach for measuring parameters of semiconductor lasers[J]. Laser & Infrared, 2006, 36(2): 114-117.
[18] 禹延光, 袁秀娟. 适度光反馈机制下线宽展宽因数的自动测量[J]. 中国激光, 2008, 35(1): 97-101.
[19] 栖原敏明. 半导体激光器基础[M]. 周南生, 译. 北京: 科学出版社, 2002: 47.
[20] PIPREK J. Semiconductor optoelectronic devices[M]. California: Academic Press, 2003: 7, 94.
张帆, 李林, 王勇, 邹永刚, 李占国, 马晓辉, 隋庆学, 刘国军. GaAs半导体激光器线宽展宽因子的理论计算[J]. 光子学报, 2011, 40(4): 521. ZHANG Fan, LI Lin, WANG Yong, ZOU Yong-gang, LI Zhan-guo, MA Xiao-hui, SUI Qing-xue, LIU Guo-jun. Theoretical Calculation of Linewidth Enhancement Factor in GaAs Semiconductor Lasers[J]. ACTA PHOTONICA SINICA, 2011, 40(4): 521.