中波碲镉汞雪崩光电二极管的增益特性

李雄军; 韩福忠; 李立华; 李东升; 胡彦博; 杨登泉; 杨超伟; 孔金丞; 舒恂; 庄继胜; 赵俊

doi:doi:10.11972/j.issn.1001-9014.2019.02.009

红外与毫米波学报, 2019, 38 (2): 02175, 网络出版: 2019-05-10

中波碲镉汞雪崩光电二极管的增益特性

Gain characteristics of MW HgCdTe avalanche photodiodes

论文大纲

李雄军 ^*韩福忠李立华李东升胡彦博杨登泉杨超伟孔金丞舒恂庄继胜赵俊

作者单位

昆明物理研究所, 云南昆明 650223

中波碲镉汞雪崩光电二极管增益 midium wave (MW) HgCdTe avalanche photodiode gain C-V C-V

摘要

采用不同工艺制备了中波碲镉汞(HgCdTe)雪崩二极管(APD)器件, 利用不同方法对其结特性和增益随偏压变化关系进行了表征, 并基于Beck模型和肖克莱解析式进行了拟合分析.结果表明, 不同工艺制备的APD器件饱和耗尽区宽度分别为1.2 μm 和2.5 μm, 较宽的耗尽层有效抑制了高反偏下器件的隧道电流, 器件有效增益则从近100提高至1000以上.用肖克莱解析式拟合HgCdTe APD器件增益-偏压曲线, 获得了较好的效果.拟合结果与Sofradir公司的J. Rothman的报道相似.

Abstract

The midium wave (MW) HgCdTe avalanche photodiodes (HgCdTe APDs) were prepared by two different processes. The pn junction characteristics and the relation between gain and bias voltage for HgCdTe APDs were characterized by two different methods. The gain-bias curves of APDs were fitted based on the Beck model and Shockley′s analytical expression. The results show that the widths of the saturated depletion region for APDs fabricated by two different processes are 1.2μm and 2.5μm respectively. The wide depletion region effectively suppresses the tunneling current at high reverse bias. The effective gain of the device increases from nearly 100 to over 1000. Shockley′s analytical expression gives an excellent fit to the gain-bias curves of HgCdTe APDs, and the fitting parameters are similar to the results of J. Rothman at Sofradir.

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李雄军, 韩福忠, 李立华, 李东升, 胡彦博, 杨登泉, 杨超伟, 孔金丞, 舒恂, 庄继胜, 赵俊. 中波碲镉汞雪崩光电二极管的增益特性[J]. 红外与毫米波学报, 2019, 38(2): 02175. LI Xiong-Jun, HAN Fu-Zhong, LI Li-Hua, LI Dong-Sheng, HU Yan-Bo, YANG Deng-Quan, YANG Chao-Wei, KONG Jin-Cheng, SHU Xun, ZHUANG Ji-Sheng, ZHAO Jun. Gain characteristics of MW HgCdTe avalanche photodiodes[J]. Journal of Infrared and Millimeter Waves, 2019, 38(2): 02175.

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