激光与光电子学进展, 2007, 44 (2): 31, 网络出版: 2007-02-26   

硅基集成光电子器件的新进展 下载: 1331次

Progress on Si-Based Optoelectronic Devices and Integration
作者单位
1 武汉光电国家实验室, 华中科技大学, 武汉 430074
2 乔治亚理工学院电子和计算机工程系, 亚特兰大 30332 美国
摘要
综述了硅基微纳激光器、调制器、探测器及光传输控制器件的最新研究进展。重点阐述了表面等离子体、量子阱、光子晶体及纳米光栅等新型结构在提高器件综合性能和降低器件尺寸方面的重大作用。同时, 还展示了用标准互补金属氧化物半导体(CMOS)技术, 实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。
Abstract
This paper summarizes the progresses in Si-based micro/nano lasers, modulators, detectors, and optical propagating and controlling devices. The emphasis is given to describe the important contributions of some novel structures such as surface plasmon, quantum well, photonic crystals and nano gratings on improving the properties and decreasing overall sizes of optoelectronic devices. The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor(CMOS) technologies is also presented.
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周治平, 郜定山, 汪毅, 陈金林, 冯俊波. 硅基集成光电子器件的新进展[J]. 激光与光电子学进展, 2007, 44(2): 31. 周治平, 郜定山, 汪毅, 陈金林, 冯俊波. Progress on Si-Based Optoelectronic Devices and Integration[J]. Laser & Optoelectronics Progress, 2007, 44(2): 31.

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