Stress damage process of silicon wafer under millisecond laser irradiation

Zhichao Jia; Tingzhong Zhang; Huazhong Zhu; Zewen Li; Zhonghua Shen; Jian Lu; Xiaowu Ni

doi:doi:10.3788/COL201816.011404

Chinese Optics Letters, 2018, 16 (1): 011404, Published Online: Jul. 17, 2018

Stress damage process of silicon wafer under millisecond laser irradiation Download： 764次

Zhichao Jia ¹Tingzhong Zhang ²Huazhong Zhu ¹Zewen Li ¹Zhonghua Shen ¹Jian Lu ¹Xiaowu Ni ^1,*

Author Affiliations

¹ School of Science, Nanjing University of Science & Technology, Nanjing 210094, China

² Institute of Mechanical and Electrical Engineering, Zhoukou Normal University, Zhoukou 466000, China

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Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404.

Cited By

1、 Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser IrradiationActa Optica Sinica, 2020, 40 (5): 0514002

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