Stress damage process of silicon wafer under millisecond laser irradiation

Zhichao Jia; Tingzhong Zhang; Huazhong Zhu; Zewen Li; Zhonghua Shen; Jian Lu; Xiaowu Ni

doi:doi:10.3788/COL201816.011404

Chinese Optics Letters, 2018, 16 (1): 011404, Published Online: Jul. 17, 2018

Stress damage process of silicon wafer under millisecond laser irradiation Download： 764次

Zhichao Jia ¹Tingzhong Zhang ²Huazhong Zhu ¹Zewen Li ¹Zhonghua Shen ¹Jian Lu ¹Xiaowu Ni ^1,*

Author Affiliations

¹ School of Science, Nanjing University of Science & Technology, Nanjing 210094, China

² Institute of Mechanical and Electrical Engineering, Zhoukou Normal University, Zhoukou 466000, China

Figures & Tables

Fig. 1. Experimental setup for testing damage.

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Fig. 2. Real-time images induced by different laser energy densities for (a) 19 and (b) 23 J/cm2, respectively. (c) and (d) Corresponding morphological images taken by an optical microscope (OM) after experiment.

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Fig. 3. (a)–(d) Real-time images at different times. The laser energy density is 28 J/cm2. (e) the morphological image taken by the OM after the experiment.

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Fig. 4. Simulation model of a silicon wafer under laser irradiation.

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Fig. 5. (Color online) (a) Temperature of spot center and (b) von Mises stresses along the X axis at 0.7, 1, 1.1, and 1.3 ms, respectively.

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Fig. 6. Images just before fracture. The experiment is the same as that of Fig. 3.

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Fig. 7. (Color online) (a) Concentric circle and (b) shear stresses along it at 1.5 ms. S1, S2, and S3 represent the shear stress along (111)[110], (111)[101], and (111)[011], respectively.

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Fig. 8. (a) Typical ablation morphology induced by a millisecond laser and (b) a nanosecond laser.

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Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni. Stress damage process of silicon wafer under millisecond laser irradiation[J]. Chinese Optics Letters, 2018, 16(1): 011404.

Stress damage process of silicon wafer under millisecond laser irradiation Download： 764次

Fig. 1. Experimental setup for testing damage.

Fig. 2. Real-time images induced by different laser energy densities for (a) 19 and (b) 23 J/cm2, respectively. (c) and (d) Corresponding morphological images taken by an optical microscope (OM) after experiment.

Fig. 3. (a)–(d) Real-time images at different times. The laser energy density is 28 J/cm2. (e) the morphological image taken by the OM after the experiment.

Fig. 4. Simulation model of a silicon wafer under laser irradiation.

Fig. 5. (Color online) (a) Temperature of spot center and (b) von Mises stresses along the X axis at 0.7, 1, 1.1, and 1.3 ms, respectively.

Fig. 6. Images just before fracture. The experiment is the same as that of Fig. 3.

Fig. 7. (Color online) (a) Concentric circle and (b) shear stresses along it at 1.5 ms. S1, S2, and S3 represent the shear stress along (111)[110], (111)[101], and (111)[011], respectively.

Fig. 8. (a) Typical ablation morphology induced by a millisecond laser and (b) a nanosecond laser.

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Stress damage process of silicon wafer under millisecond laser irradiation Download： 764次

Fig. 1. Experimental setup for testing damage.

Fig. 2. Real-time images induced by different laser energy densities for (a) 19 and (b) 23 J/cm2, respectively. (c) and (d) Corresponding morphological images taken by an optical microscope (OM) after experiment.

Fig. 3. (a)–(d) Real-time images at different times. The laser energy density is 28 J/cm2. (e) the morphological image taken by the OM after the experiment.

Fig. 4. Simulation model of a silicon wafer under laser irradiation.

Fig. 5. (Color online) (a) Temperature of spot center and (b) von Mises stresses along the X axis at 0.7, 1, 1.1, and 1.3 ms, respectively.

Fig. 6. Images just before fracture. The experiment is the same as that of Fig. 3.

Fig. 7. (Color online) (a) Concentric circle and (b) shear stresses along it at 1.5 ms. S1, S2, and S3 represent the shear stress along (111)[110], (111)[101], and (111)[011], respectively.

Fig. 8. (a) Typical ablation morphology induced by a millisecond laser and (b) a nanosecond laser.

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