Photonic Sensors, 2018, 8 (3): 03213, Published Online: Aug. 4, 2018
Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots
Basic Information
| DOI: | 10.1007/s13320-018-0475-z |
| 中图分类号: | -- |
| 栏目: | Regular |
| 项目基金: | The authors gratefully acknowledge the supports from the National Natural Science Foundation of China (Grant No. U1304608), the Project of Henan Provincial Department of Science and Technology (Grant No. 182102410047), and the Program of Henan Polytechnic University (Grant No. T2015-3). |
| 收稿日期: | Oct. 24, 2017 |
| 修改稿日期: | -- |
| 网络出版日期: | Aug. 4, 2018 |
| 通讯作者: | Guodong WANG (wgdhpu@hotmail.com) |
| 备注: | -- |
Guodong WANG, Huiqiang JI, Junling SHEN, Yonghao XU, Xiaolian LIU, Ziyi FU. Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots[J]. Photonic Sensors, 2018, 8(3): 03213.
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