Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots
[1] A. W. Walker, S. Hechelmann, C. Karcher, O. Hohn, C. Went, M. Niemeyer, et al., “Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures,” Journal of Applied Physics, 2016, 119(15): 155702-1-155702-10.
[2] H. Saito, K. Nishi, and S. Sugou, “Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission,” Applied Physics Letters, 1998, 73(19): 2742-2744.
[3] G. D. Wang, B. L. Liang, B. C. Juang, A. Das, M. C. Debnath, D. L. Huffaker, et al., “Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots,” Nanotechnology, 2016, 27(46): 465701-1-465701-6.
[4] D. Chettri, T. J. Singh, and K. J. Singh, “InAs/GaAs quantum dot solar cell,” International Journal of Electronics, Electrical and Computational System, 2017, 6(3): 221-224.
[5] A. D. Utrilla, D. F. Reyes, J. M. Llorens, I. Artacho, T. Ben, D. Gonzalez, et al., “Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells,” Solar Energy Materials & Solar Cells, 2017, 159: 282-289.
[6] K. Sablon, J. Little, N. Vagidov, Y. Li, V. Mitin, and A. Sergeev, “Conversion of above- and below bandgap photons via InAs quantum dot media embedded into GaAs solar cell,” Applied Physics Letters, 2014, 104(25): 253904-1-253904-5.
[7] B. Shi, S. Zhu, Q. Li, Y. T. Wan, E. L. Hu, and K. M. Lau, “Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon,” ACS Photonics, 2017, 4: 204-210.
[8] F. Gao, S. Luo, H. M. Ji, X. G. Yang, and T. Yang, “Enhanced performance of tunable external-cavity 1.5 μm InAs/InP quantum dots lasers using facet coating,” Applied Optics, 2015, 54(3): 472-476.
[9] A. Zeghuzi, H. Schmeckebier, M. Stubenrauch, C. Meuer, C. Schubert, C. A. Bunge, et al., “25 Gbits differential phase-shift-keying signal generation using directly modulated quantum dot semiconductor optical amplifiers,” Applied Physics Letters, 2015, 106: 213501-1-213501-4.
[10] S. M. Chen, W. Li, Z. Y. Zhang, D. Childs, K. J. Zhou, J. Orchard, et al., “GaAs-based superluminescent light emitting diodes with 290 nm emission bandwidth by using hybrid quantum well/quantum dot structures,” Nanoscale Research Letters, 2015, 10(1): 1-8.
[11] R. D. Angelis, M. Casalboni, F. D. Matteis, F. Hatami, W. T. Masselink, H. Zhang, et al., “Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy,” Journal of Luminescence, 2015, 168: 54-58.
[12] M. J. Milla, J. M. Ulloa, and A. Guzman, “Strong Influence of the humidity on the electrical properties of InGaAs surface quantum dots,” ACS Applied Materials & Interfaces, 2014, 6(9): 6191-6195.
[13] R. D. Angelis, L. D. Amico, M. Casalboni, F. Hatami, W. T. Masselink, and P. Prosposito, “Photoluminescence sensitivity to methanol vapours of surface InP quantum dots: effect of dot size and coverage,” Sensors & Actuators B: Chemical, 2013, 189(2): 113-117.
[14] B. L. Liang, Z. M. Wang, Y. I. Mazur, S. Seydmohamadi, M. E. Ware, and G. J. Salamo, “Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures,” Optics Express, 2007, 15(3): 8157-8162.
[15] Z. X. Zhao, R. B. Laghumavarapu, P. J. Simmonds, H. M. Ji, B. A. Liang, and D. L. Huffaker, “Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots,” Journal of Crystal Growth, 2015, 425: 321-315.
[16] I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” Journal of Applied Physics, 2001, 89(11): 5815-5875.
[17] D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. L. Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Applied Physics Letters, 1996, 68(2): 205-207.
[18] Z. Y. Xu, Z. D. Lu, Z. L. Yuan, X. P. Yang, B. Z. Zheng, J. Z. Xu, et al., “Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots,” Superlattices and Microstructures, 1998, 23(2): 381-387.
[19] J. Z. Wang, Z. Yang, and C. L. Yang, “Photoluminescence of InAs quantum dots grown on GaAs surface,” Applied Physics Letters, 2000, 77(18): 2837-2839.
[20] M. J. Milla, J. M. Ulloa, and A. Guzman, “Strong influence of the humidity on the electrical properties of InGaAs surface quantum dots,” ACS Applied Materials & Interfaces, 2014, 6(9): 6191-6195.
[21] M. J. Milla, J. M. Ulloa, and A. Guzman, “Photoexcited induced sensitivity of InGaAs surface QDs to environment,” Nanotechnology, 2014, 25(44): 445501-1-445501-6.
[22] R. D. Angelis, M. Casalboni, F. D. Matteis, F. Hatami, W. T. Masselink, H. Zhang, et al., “Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy,” Journal of Luminescence, 2015, 168: 54-58.
Guodong WANG, Huiqiang JI, Junling SHEN, Yonghao XU, Xiaolian LIU, Ziyi FU. Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7As Buried and Surface Quantum Dots[J]. Photonic Sensors, 2018, 8(3): 03213.