氧化镓生长模拟中的流场与反应参数优化研究
戴必胜, 陈琳, 陶志阔, 修向前. 氧化镓生长模拟中的流场与反应参数优化研究[J]. 半导体光电, 2020, 41(4): 527.
DAI Bisheng, CHEN Lin, TAO Zhikuo, XIU Xiangqian. Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide[J]. Semiconductor Optoelectronics, 2020, 41(4): 527.
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戴必胜, 陈琳, 陶志阔, 修向前. 氧化镓生长模拟中的流场与反应参数优化研究[J]. 半导体光电, 2020, 41(4): 527. DAI Bisheng, CHEN Lin, TAO Zhikuo, XIU Xiangqian. Optimization of Flow Field and Reaction Parameters in the Growth Simulation of Gallium Oxide[J]. Semiconductor Optoelectronics, 2020, 41(4): 527.
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