原生CVDZnSe、CVDZnS晶体内Zn-H络合物含量不同的机理分析 | 红外与激光工程 -- 中国光学期刊网

红外与激光工程, 2005, 34 (1): 31, 网络出版: 2006-05-25

原生CVDZnSe、CVDZnS晶体内Zn-H络合物含量不同的机理分析

Analysis on mechanism of different Zn-H content in as-grown CVDZnSe and CVDZnS

论文大纲

付利刚 ^*霍承松鲁泥藕

作者单位

北京有色金属研究总院,北京国晶辉红外光学科技有限公司,北京,100088

化学气相沉积 Zn-H络合物 Chemical Vapor Deposition ZnSe ZnSe ZnS ZnS Zn-H

摘要

化学气相沉积ZnSe与ZnS晶体结构及物理性能近似,但原生ZnS在6.2μm处存在由ZnH络合物引起的明显的吸收峰,其中的H来源于未分解的含H反应气体,而原生ZnSe则无此现象.比较分析它们的沉积条件(温度、压力)以及反应气性质后认为:ZnSe相对较高的沉积温度和反应气之一的H2Se低的分解温度是主要的原因,同时高温可减弱含H缺陷对ZnS光学性能的影响;其次,ZnSe沉积中压力低使反应物浓度降低且有利于未参与反应的H2Se气体返回主气流减少了ZnSe晶体中Zn-H络合物的含量.

Abstract

CVDZnSe and CVDZnS have similar crystal structure and properties,but absorption peak near 6.2 μm which is brought by the Zn-H is an important difference between as-grown CVDZnSe and CVDZnS. The H comes from the undissociated reaents that contain H.The reason why only ZnS has the absorption peak is discussed by comparing their deposition parameters (temperature, pressure), deposition rate and dissociated temperature of reagents that contain H. Because the dissociate temperature of H2Se is lower than H2S, the higher deposition temperature decreases the Zn-H in ZnSe, at the same time, the influence of Zn-H on ZnS can be decreased by increasing the deposition temperature. Lower deposition pressure of ZnSe is the other reason. Low pressure decreases the reactant concentration, furthermore it favors undissociated H2Se going back to the main airstream.

参考文献

[1] . Crystalline optical materials for ultraviolet visible,and infrared applications[J]. Optical Material, 1990, 1: 323-408.

[2] . Infrared transmitting materials[J]. J Mater Sci, 1978, 13: 1151-1176.

[3] Mufit Akinc, Ahmet Celikkaya. Synthesis and hot pressing of ZnS power[A].SPIE[C]. 1989,1112.60-67.

[4] Ching-Huasu. Bule growth of wide band gap Ⅱ-Ⅵ compound semiconductors by physical vapor transport[A].SPIE[C].1997,3123.7-12.

[5] . Monolithic material fabrication by chemical vapor deposition[J]. J Mater Sci, 1988, 23: 4331-4339.

[6] . Review the fundamentals of chemical vapor deposition[J]. J Mater Sci, 1977, 12: 1285-1306.

[7] Paul Klocek,Louis E Stone, Maurece W Boucher, et al. Semiconductor infrared optical materials[A].SPIE[C].1988,929.65-68.

[8] Claude A Kiein,Bernard diBenedetto, Theoccre Kohane. Chemically vapor-deposited zinc sulfide infrared windows: optical properties and physical characteristics[A].SPIE[C].1979,204.88-92.

[9] . Hydrogen-related deffects in vapour-deposited zinc sulfide[J]. J of Crystal Growth, 1984, 669: 125-136.

[10] Yu Huaizhi, Song Rui-feng, Huo Chengsong. The study of the relationship between inside defects and optical properties of CVD ZnS[A].SPIE[C]. 2000, 4231.224-227.

付利刚, 霍承松, 鲁泥藕. 原生CVDZnSe、CVDZnS晶体内Zn-H络合物含量不同的机理分析[J]. 红外与激光工程, 2005, 34(1): 31. 付利刚, 霍承松, 鲁泥藕. Analysis on mechanism of different Zn-H content in as-grown CVDZnSe and CVDZnS[J]. Infrared and Laser Engineering, 2005, 34(1): 31.

论文摘要 Full Text 图 & 表补充材料基本信息知识挖掘 Metrics PDF全文参考文献 & 引文

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网

引用该论文： TXT | EndNote

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务，点击此处了解我们的隐私策略。如您需继续使用本网站，请您授权我们使用本地 cookie 来保存部分信息。

您最值得信赖的光电行业旗舰网络服务平台!

快速查询高级查询

最近搜索：

大家在搜：人工智能图像处理光子

热门搜索：机器视觉光通信光纤传感器