作为传统显示器强有力的竞争者之一，量子点发光二极管（QLED）在显示领域备受关注。然而，高性能蓝光QLED器件的发光材料中通常含有镉或铅，这两类重金属有毒元素对人体健康和生态环境不利，也阻碍了QLED器件的规模化商用进程。因此，高质量无镉无铅型蓝光量子点材料的研发成为推动新型显示产业发展的动力和业界迫切追求的目标。历经数十年发展，InP和ZnSe等无镉无铅量子点材料的蓝光发射性能已取得较大进步，随着合成策略及蓝光材料的进一步优化改进，环境友好型蓝光量子点发光二极管器件性能有望追上传统红、绿光量子点器件的步伐。本文分别从合成优化手段、表面包覆策略、核壳结构类型、发光性能参数等方面进行汇总，系统综述了当前无镉无铅型蓝光InP和ZnSe量子点材料的研究进展，指出了QLED蓝光材料未来的发展方向。

设计并制备了780 nm大功率半导体激光器的单管和巴条。采用金属有机化学气相沉积技术制备的外延结构，分别使用GaAsP和GaInP作为量子阱和波导层，限制层是具有高带隙的AlGaInP材料。量子阱与波导层带隙0.15 eV，波导层与限制层带隙0.28 eV，抑制了载流子泄露。1.55 μm厚非对称大光学腔波导结构抑制快轴高阶模，同时缓解腔面损伤问题。为进一步提高腔面损伤阈值，利用超高真空解理和钝化技术，在腔面上沉积了非晶ZnSe钝化层。条宽150 μm、腔长4 mm的单管器件，在电流为15 A时，输出连续功率16.3 W未出现COD现象，斜率效率达到1.27 W/A，电光转换效率为58%，慢轴发散角9.9°，光谱半高宽为1.81 nm。填充因子为40%的厘米巴条，在192 A下实现连续输出功率180 W，电光转换效率为50.7%，光谱宽度仅为2.2 nm。

In this Letter, we report on widely tunable pulse generation from a red-diode-clad-pumped mid-infrared (mid-IR) Er3+/Dy3+ codoped ZrF4 fiber laser, for the first time, to the best of our knowledge. Using a Fe2+:ZnSe crystal, continuously tunable Q-switched pulses across the range of 3.06–3.62 µm have been attained, which not only represents the widest range (in wavelength domain) from a pulsed rare-earth-doped fiber laser at any wavelength, but also almost entirely covers the strong absorption band of C-H bonds in the mid-IR, providing a potential way for gas detection and polymer processing. In addition, the commercial InAs quantum-well-based saturable absorbers (SAs) have been employed instead, and the obtained longest Q-switching wavelength of 3.39 µm is slightly shorter than 3.444 µm determined by its nominal direct bandgap of 0.36 eV.