采用Ar+激光对Ge等半导体材料进行了光刻研究。实验发现存在两种阈值, 表面扫描光刻具有较低的阈值, 刻穿则要求更高的光强。刻蚀速率随着深度的增加而减小, 高掺杂半导体的光刻速率大于低掺杂样品。

Semiconductor materials such as Ge and InP etc, were investigated by the laser-induced chemical photolithography with argon ion laser. Two kinds of thresholds of light intensities were observrd respectively for the scanning photolithography on the surface and the rapid penetrated etching. The former has a lower threshold and the latter higher depending on the matting point. There exists a complicated relation between the etching rate and the light intensity. The etching rate decreased with the increase of the etching depth. Semiconductor species with higher dopant concentration were etched faster than those with lower dopant concentration.