采用感应耦合等离子体刻蚀技术，以CF4/Ar/O2为反应气体对熔石英元件表面进行修饰，研究并分析了CF4和Ar流量对刻蚀速率、熔石英表面粗糙度和微观形貌的影响。结果表明，CF4化学刻蚀与Ar的物理轰击对熔石英样品表面修饰效果存在一定竞争关系，当它们达到平衡时表面粗糙度最小。通过对不同流量气体刻蚀过后熔石英表面粗糙度和光学显微形貌分析获得了较为理想的气流量配比，该研究为反应等离子体修饰熔石英光学元件以获得较高光学性能提供工艺参考。

The surface of quartz components was decorated by inductively coupled plasma (ICP) sculpture technology with CF4/Ar/O2 mixture gas. The effects of gas flow rate on etching rate, surface roughness and morphology were analyzed in detail. The results show that the surface properties were influenced by the etching effect of CF4 as well as the bombardment of Ar. A reasonable flow ratio of them was determined to improve the surface roughness. Furthermore, by optical microscopy analysis, some important parameters were determined so that the etching process was optimized. This research provides a reference for the study of surface modification of fused quartz components to improve their optical performances.