CF4/Ar/O2等离子体对熔石英元件的修饰工艺
[1] Camp D W, Kozlowski M R, Sheehan L M, et al. Subsurface damage and polishing compound affect the 355 nm laser damage threshold of fused silica surfaces［C］//Proc of SPIE. 1998, 3244: 356-360.
[2] Kamimura T, Nakai K, Mori Y, et al. Improvement of laser-induced surface damage in UV optics by ion beam etching［C］//Proc of SPIE. 1998, 3578: 695-701.
[3] 何小峰. 反应离子刻蚀设备的方案设计研究［D］. 长沙：国防科学技术大学, 2004: 6-7.(He Xiaofeng. Study on design of reactive ion etching equipment. Changsha: National University of Defense Technology, 2004: 6-7)
[4] 陆建祖, 魏红振, 李玉鉴, 等. 反应离子刻蚀仿真工艺的研究［J］. 功能材料与器件学报, 2000, 6(4): 420-424. (Lu Jianzu, Wei Hongzhen, Li Yujian, et al. Modeling and simulation of reactive ion etching technology. Journal of Functional Materials and Devices, 2000, 6(4): 420- 424)
[5] 王玲, 任大翠, 张宝顺, 等.反应离子刻蚀实验研究［J］. 长春光学精密机械学院学报, 1996,19(4):38-40.(Wang Ling, Ren Dacui, Zhang Baoshun, et al. Experimental study of reactive ion etching. Journal Changchun Institute of Optics and Fine Mechanics, 1996, 19(4):38-40)
[6] 张锦, 冯伯儒, 杜春雷, 等.反应离子刻蚀工艺因素研究［J］. 光电工程, 1997, 24(2):46-51.(Zhang Jin, Feng Boru, Du Chunlei, et al. Research on the technological factors for the reactive ion etching. Opto Electronic Engineering, 1997, 24(2):46-51)
[7] Li Xi, Ling Li, Hua Xuefeng, et al. Effects of Ar and O2 additives on SiO2 etching in C4F8 -based plasmas［J］. J Vac Scl Technol A, 2003, 21(1): 284-293.
[8] Draghici M, Stamate E. Properties and etching rates of negative ions in inductively coupled plasmas and DC discharges produced in Ar/SF6［J］. Journal of Applied Physics, 2010, 107: 123304.
[9] Kiss L D B, Nicolai J P, Conner W T, et al. CF and CF2 actionometry in a CF4/Ar plasma［J］. J Appl Phys, 1992, 71(7): 3186-3192.
[10] Paul A K, Dimri A K, Bajpai R P. Delineation of MEMS microstructures in silicon using CF4/O2 gas mixtures in reactive ion etching［C］// Proc of SPIE. 2002, 4936: 93-97.
[11] Mauer J L, Logan J S, Zielinski L B, et al. Mechanism of silicon etching by a CF4 plasma［J］. J Vac Sci Tech, 1978, 15: 1734.
[12] 黄松. 感应耦合放电的碳氟等离子体行为及碳氟薄膜生长机理［D］. 苏州：苏州大学,2005:57.(Huang Song. Plasma behaviors of inductively coupled fluorocarbon discharges and fluorinated carbon films growth mechanism. Suzhou: Suzhou University, 2005:57)
邵勇, 孙来喜, 吴卫东, 孙卫国. CF4/Ar/O2等离子体对熔石英元件的修饰工艺[J]. 强激光与粒子束, 2014, 26(3): 032002. Shao Yong, Sun Laixi, Wu Weidong, Sun Weiguo. Using CF4/Ar/O2 plasma to modify surface of fused quartz components[J]. High Power Laser and Particle Beams, 2014, 26(3): 032002.
PDF全文
