InGaAsP多量子阱双稳态激光器的实验及理论研究

从实验和理论上研究了InGaAsP多量子阱(Multi-Quantum-Well, MQW)双区共腔(Common Cavity Tandem Section, CCTS)结构半导体激光器的吸收区偏置状态对双稳态特性的影响。实验结果表明: 随着可饱和吸收区上的负偏置电压的增大, 激光器P-I曲线中双稳态特性更加明显, V-I曲线有负微分电阻, 当偏压加至-3 V时, 回滞曲线环宽度增加至13.5 mA, 开关比达到21: 1。理论分析表明, 利用吸收区的高负偏置态和短载流子逃逸时间能获得更好的双稳态特性。最大107: 1的开关比也说明双区共腔激光器能在两稳态之间实现非常明确的转换。

Abstract

Influences of the bias states of saturable absorbers on bistable InGaAsP multi-quantum-well(MQW) common cavity tandem section(CCTS) semiconductor lasers were investigated experimentally and theoretically. The experiment demonstrated that the bistability characteristic of P-I curves can be more significant with increasing reversed bias voltage in the saturable absorber(SA), and a negative differential resistance phenomenon was found in V-I curves. When the voltage was -3 V, the hysteresis width was broadened to 13.5 mA, with the on-off ratio up to 21: 1. The theoretical analysis proves that higher passive voltage in SA and shorter carrier escape time can result in better bistability. The maximum on-off ratio as high as 107: 1 promises that a common cavity two-section laser can be switching between the two-steady state.

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徐玉兰, 林中晞, 陈景源, 林琦, 王凌华, 苏辉. InGaAsP多量子阱双稳态激光器的实验及理论研究[J]. 红外与激光工程, 2018, 47(11): 1105004. Xu Yulan, Lin Zhongxi, Chen Jingyuan, Lin Qi, Wang Linghua, Su Hui. Experimental and theoretical study of the bistable InGaAsP multi-quantum-well lasers[J]. Infrared and Laser Engineering, 2018, 47(11): 1105004.

InGaAsP多量子阱双稳态激光器的实验及理论研究

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