作者单位
摘要
中国工程物理研究院 流体物理研究所,四川 绵阳 621900
为解决光寻址液晶光阀在高功率密度光束控制领域的应用限制,介绍一种可用于高功率密度激光系统的光寻址液晶光阀,该光阀开关比不低于140∶1,可在高于2300 W/cm2的连续激光系统中正常工作。同时,所研制的光阀可在高重频吉瓦(GW)级功率密度的fs脉冲激光系统中正常工作,在该系统最大功率密度激光作用下,光阀未见明显温度变化,该脉冲激光系统最大平均功率密度超过300 W/cm2
光寻址液晶光阀 光束控制 高功率密度 连续激光 高开关比 optically addressed liquid crystal light valve beam control high power density continuous laser high on/off ratio 
强激光与粒子束
2023, 35(4): 041012
Author Affiliations
Abstract
1 Institute for Advanced Materials, South China Normal University, Guangzhou 510006, P. R. China
2 Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou 510006, P. R. China
3 Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, P. R. China
4 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China
5 Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, Hebei University, Baoding 071002, P. R. China
6 Laboratory of Solid State Microstructures and Innovation Center of Advanced, Nanjing 210093, P. R. China
Ferroelectric tunnel junction (FTJ) has attracted considerable attention for its potential applications in nonvolatile memory and neuromorphic computing. However, the experimental exploration of FTJs with high ON/OFF ratios is a challenging task due to the vast search space comprising of ferroelectric and electrode materials, fabrication methods and conditions and so on. Here, machine learning (ML) is demonstrated to be an effective tool to guide the experimental search of FTJs with high ON/OFF ratios. A dataset consisting of 152 FTJ samples with nine features and one target attribute (i.e., ON/OFF ratio) is established for ML modeling. Among various ML models, the gradient boosting classification model achieves the highest prediction accuracy. Combining the feature importance analysis based on this model with the association rule mining, it is extracted that the utilizations of {graphene/graphite (Gra) (top), LaNiO3 (LNO) (bottom)} and {Gra (top), Ca0.96Ce0.04MnO3 (CCMO) (bottom)} electrode pairs are likely to result in high ON/OFF ratios in FTJs. Moreover, two previously unexplored FTJs: Gra/BaTiO3 (BTO)/LNO and Gra/BTO/CCMO, are predicted to achieve ON/OFF ratios higher than 1000. Guided by the ML predictions, the Gra/BTO/LNO and Gra/BTO/CCMO FTJs are experimentally fabricated, which unsurprisingly exhibit 1000 ON/OFF ratios (8540 and 7890, respectively). This study demonstrates a new paradigm of developing high-performance FTJs by using ML.Ferroelectric tunnel junction (FTJ) has attracted considerable attention for its potential applications in nonvolatile memory and neuromorphic computing. However, the experimental exploration of FTJs with high ON/OFF ratios is a challenging task due to the vast search space comprising of ferroelectric and electrode materials, fabrication methods and conditions and so on. Here, machine learning (ML) is demonstrated to be an effective tool to guide the experimental search of FTJs with high ON/OFF ratios. A dataset consisting of 152 FTJ samples with nine features and one target attribute (i.e., ON/OFF ratio) is established for ML modeling. Among various ML models, the gradient boosting classification model achieves the highest prediction accuracy. Combining the feature importance analysis based on this model with the association rule mining, it is extracted that the utilizations of {graphene/graphite (Gra) (top), LaNiO3 (LNO) (bottom)} and {Gra (top), Ca0.96Ce0.04MnO3 (CCMO) (bottom)} electrode pairs are likely to result in high ON/OFF ratios in FTJs. Moreover, two previously unexplored FTJs: Gra/BaTiO3 (BTO)/LNO and Gra/BTO/CCMO, are predicted to achieve ON/OFF ratios higher than 1000. Guided by the ML predictions, the Gra/BTO/LNO and Gra/BTO/CCMO FTJs are experimentally fabricated, which unsurprisingly exhibit 1000 ON/OFF ratios (8540 and 7890, respectively). This study demonstrates a new paradigm of developing high-performance FTJs by using ML.
Machine learning ferroelectric tunnel junctions ON/OFF ratio nonvolatile memory 
Journal of Advanced Dielectrics
2022, 12(3): 2250005
作者单位
摘要
上海理工大学 材料与化学学院,上海 200093
通过原位生长法制备了一种CuSCN纳米薄膜紫外光电探测器,在-1 V 偏压下,入射光为350 nm时,CuSCN紫外光电探测器的开关比~94,响应/恢复时间~1.41 s/1.44 s。但这种器件仍不能称之为一种高性能的光电探测器。为进一步提高CuSCN纳米薄膜的光电性能,我们制备了一种基于 n​​-ZnS/p-CuSCN 复合薄膜的紫外光电探测器,并对制备的样品进行了形貌、成分和性能分析。结果显示,在-1 V 偏压下,入射波长为350 nm时,ZnS/CuSCN紫外光电探测器表现出比CuSCN紫外光电探测器更高的光电流和更低的暗电流,分别为1.22×10-5 A和4.8×10-9 A。基于ZnS/CuSCN 纳米薄膜的紫外光电探测器开关比-2 542,响应/恢复时间为0.47 s/0.48 s,在350 nm波长下具备最佳的响应度和探测率,分别为5.17 mA/W和1.32 × 1011 Jones。此外,n-ZnS/p-CuSCN复合薄膜在室温下性能稳定,具有作为高性能紫外探测器的潜力。
光电探测器 p-n结 ZnS/CuSCN 开关比 photodetector p-n junction ZnS/CuSCN on/off ratio 
发光学报
2022, 43(6): 911
作者单位
摘要
香港浸会大学 物理系, 有机电子科学卓越研究中心, 先进材料研究所,香港 999077
开发高性能的近红外可视化器件在生物成像、食物检测、健康监测和环境分析等领域有着重要意义。近红外可视化器件由光探测单元和发光单元组成, 可将人眼不可视的近红外光转换为可见光。其工作机制是, 光探测单元作为发光单元的载流子注入层, 在近红外光下产生光电流, 因而被近红外光照射的区域会产生电荷注入, 在发光单元的对应区域复合发光, 发射可见光。没有近红外光照射时, 光探测单元中不产生光电流, 将抑制发光单元中的电荷注入, 因而不发光。因此, 近红外可视化器件可用于对辐射、反射或吸收近红外光的物质成像。本综述介绍了近红外可视化器件的工作原理和最新进展, 包括基于无机、有机半导体等不同材料的近红外可视化器件。研究发现, 近红外可视化器件的光子转换效率由近红外光探测单元和发光单元的光电转换效率决定。本文归纳了提高近红外可视化器件的光子-光子转换效率的方法和相关工作, 探讨和展望了近红外光的可视化技术在三维图像分析、近红外检测卡、生物成像、健康和环境监测与检测的应用前景。
近红外可视化器件 近红外光电探测器 近红外光电探测晶体管 发光二极管 光子上转换效率 光亮度开关比 NIR visualization device NIR photodetector NIR phototransistor light-emitting diode photon-to-photon upconversion efficiency luminance on-off ratio 
液晶与显示
2021, 36(1): 78
徐玉兰 1,2,*林中晞 1陈景源 1,2林琦 1,2[ ... ]苏辉 1
作者单位
摘要
1 中国科学院福建物质结构研究所 激光工程技术研究室, 福建 福州 350002
2 中国科学院大学, 北京 100049
从实验和理论上研究了InGaAsP多量子阱(Multi-Quantum-Well, MQW)双区共腔(Common Cavity Tandem Section, CCTS)结构半导体激光器的吸收区偏置状态对双稳态特性的影响。实验结果表明: 随着可饱和吸收区上的负偏置电压的增大, 激光器P-I曲线中双稳态特性更加明显, V-I曲线有负微分电阻, 当偏压加至-3 V时, 回滞曲线环宽度增加至13.5 mA, 开关比达到21: 1。理论分析表明, 利用吸收区的高负偏置态和短载流子逃逸时间能获得更好的双稳态特性。最大107: 1的开关比也说明双区共腔激光器能在两稳态之间实现非常明确的转换。
双稳态 半导体激光器 双区共腔 回滞曲线环 开关比 bistable semiconductor lasers common cavity tandem section hysteresis on-off ratio 
红外与激光工程
2018, 47(11): 1105004
作者单位
摘要
1 福建船政交通职业学院 信息工程系,福州 350007
2 韩国汉阳大学 电子与计算机工程系, 首尔 韩国133791
制备了一种以石墨烯量子点(GQDs)∶聚乙烯吡咯烷酮(PVP)混合复合材料作为有机功能层,具有氧化铟锡(ITO)/GQDs∶PVP/铝(Al)夹层结构的阻变器件。通过控制石墨烯量子点在复合体系中的浓度有效地调控阻变器件的低阻态电流与高阻态电流之间的比值(开关比)。当GQDs含量为0.6 wt%时,开关比的最大值可达1.2×104。在室温下对该最优器件进行电流-电压(I-V)特性分析,结果表明,该器件具有高效的阻变特性,可实现 “写入-擦除”操作。对该I-V特性曲线进行拟合,发现器件在不同偏压下的载流子输运机制主要由热电子发射机制、空间电荷限制电流输运机制以及欧姆传导机制共同决定。基于这些导电机制并结合GQDs∶PVP复合材料的能带结构,讨论了GQDs∶PVP复合薄膜中的载流子捕获机制和释放机制;同时,也详细分析了载流子在该器件的捕获释放过程及引发的阻变行为。
石墨烯量子点 阻变存储器 开关比 电流-电压特性 载流子输运 graphene quantum dots RRAM On/Off ratio I-V characteristics carriers transport 
光电子技术
2017, 37(4): 274
作者单位
摘要
1 复旦大学物理系
2 中国科学院上海光学精密机械研究所
本文报道在InP:Fe中皮秒二波耦合的实验研究.文中测量了瞬态二波耦合增益随泵浦光与探测光相对延迟时间改变而变化的曲线,分析了瞬态二波耦合中各种过程的特性,最后还利用皮秒二波耦合实现了低开启光强、高信噪比,透过率达17%的皮秒光开关.
光折变效应 二波耦合 开关比 透过率 
光学学报
1990, 10(11): 986

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