[1] Bagnall D M,Chen Y F,Shen M Y,et al.Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE[J].J Crystal Growth,1998,184-185:605-609.

[2] 王旭东,何世禹,杨德庄.电子辐照对ZnO/K2SiO3型热控涂层光学性能的影响[J].强激光与粒子束,2001,13(4):431-435.(Wang X D,He S Y,Yang D Z.Dependence of ZnO/K2SiO3 thermal control coating optical characteristics upon electron exposure.High Power Laser and Particle Beams,2001,13(4):431-435)

[3] OzgürU,Alivov Y I,Liu C,et al.A comprehensive review of ZnO materials and devices[J].J Appl Phys,2005,98(4):041301.

[4] Makino T,Isoya G,Segawa Y,et al.Optical spectra in ZnO thin films on lattice-matched substrates grown with laser-MBE method[J].J Crystal Growth,2000,214-215:289-293.

[5] Jin B J,Bae S H,Lee S Y,et al.Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition[J].Mater Sci Eng B,2000,71(1):301-305.

[6] Kang H S,Kang J S,Pang S S,et al.Variation of light emitting properties of ZnO thin films depending on post-annealing temperature[J].Mater Sci Eng B,2003,102(1):313-316.

[7] 徐自强,邓宏,谢娟,等.退火对ZnO:Al薄膜光致发光性能的影响[J].强激光与粒子束,2006,18(1):169-172.(Xu Z Q,Deng H,Xie J,et al.Effect of annealing on photoluminescence of ZnO:Al thin films prepared by sol-gel method.High Power Laser and Particle Beams,2006,18(1):169-172)

[8] Wang Q P,Zhang D H,Xue Z Y,et al.Violet luminescence emitted from ZnO films deposited on Si substrate by rf magnetron sputtering[J].Appl Surf Sci,2002,201:123-128.

[9] Wang Q P,Zhang D H,Xue Z Y,et al.Mechanisms of green emission from ZnO films prepared by rf magnetron sputtering[J].Optical Materials,2004,26(1):23-26.

[10] Kim D,Shimomura T,Wakaiki S,et al.Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method[J].Phys B,2006,376-377:741-744.

[11] Hayashi Y,Kondo K,Murai K,et al.ZnO-SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO2 targets[J].Vacuum,2004,74(3-4):607-611.

[12] Hong R J,Shao J D,He J,et al.Influence of buffer layer thickness on the structure and optical properties of ZnO thin films[J].Appl Surf Sci,2006,252(8):2888-2893.

[13] 方泽波,龚恒翔,刘雪芹,等.退火对多晶ZnO薄膜结构与发光特性的影响[J].物理学报,2003,52(7):1748-1751.(Fang Z B,Gong H X,Liu X Q,et al.Effects of annealing on the structure and photoluminescence of ZnO films.Acta Physica Sinica,2003,52(7):1748-1751)

[14] Xu X L,Guo C X,Qi Z M,et al.Annealing effect for surface morphology and luminescence of ZnO film on silicon[J].Chem Phys Lett,2002,364:57-63.

[15] Zhang Y T,Du G T,Liu D L,et al.Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions[J].J Crystal Growth,2002,243:439-443.

[16] 袁艳红,侯洵,高恒.超声处理对ZnO薄膜光致发光特性的影响[J].物理学报,2006,55(1):446-449.(Yan Y H,Hou X,Gao H.Effect of ultrasonic treatment on ZnO film photoluminescence.Acta Physica Sinica,2006,55(1):430-436)