Frontiers of Optoelectronics, 2012, 5 (1): 112, 网络出版: 2012-09-10
MBE growth of tensile-strained Ge quantum wells and quantum dots
MBE growth of tensile-strained Ge quantum wells and quantum dots
基本信息
DOI: | 10.1007/s12200-012-0193-x |
中图分类号: | -- |
栏目: | |
项目基金: | -- |
收稿日期: | 2011-09-16 |
修改稿日期: | -- |
网络出版日期: | 2012-09-10 |
通讯作者: | Yijie HUO (yijiehuo@gmail.com) |
备注: | -- |
Yijie HUO, Hai LIN, Robert CHEN, Yiwen RONG, Theodore I. KAMINS, James S. HARRIS. MBE growth of tensile-strained Ge quantum wells and quantum dots[J]. Frontiers of Optoelectronics, 2012, 5(1): 112. Yijie HUO, Hai LIN, Robert CHEN, Yiwen RONG, Theodore I. KAMINS, James S. HARRIS. MBE growth of tensile-strained Ge quantum wells and quantum dots[J]. Frontiers of Optoelectronics, 2012, 5(1): 112.