MBE growth of tensile-strained Ge quantum wells and quantum dots

Yijie HUO; Hai LIN; Robert CHEN; Yiwen RONG; Theodore I. KAMINS; James S. HARRIS

doi:doi:10.1007/s12200-012-0193-x

Frontiers of Optoelectronics, 2012, 5 (1): 112, 网络出版: 2012-09-10

MBE growth of tensile-strained Ge quantum wells and quantum dots

Yijie HUO ^1,*Hai LIN ²Robert CHEN ¹Yiwen RONG ¹Theodore I. KAMINS ¹James S. HARRIS ¹

作者单位

¹ Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

² Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

补充材料

Yijie HUO, Hai LIN, Robert CHEN, Yiwen RONG, Theodore I. KAMINS, James S. HARRIS. MBE growth of tensile-strained Ge quantum wells and quantum dots[J]. Frontiers of Optoelectronics, 2012, 5(1): 112. Yijie HUO, Hai LIN, Robert CHEN, Yiwen RONG, Theodore I. KAMINS, James S. HARRIS. MBE growth of tensile-strained Ge quantum wells and quantum dots[J]. Frontiers of Optoelectronics, 2012, 5(1): 112.