中国激光, 2020, 47 (7): 0701018, 网络出版: 2020-07-10 复制并引用该论文  本文已被引 3 次  被引通知

图 & 表

图 1. 用于LASTIP计算的GaN基激光器的结构简图

Fig. 1. Schematic structure of GaN-based green laser diodes (LDs) obtained by theoretical calculation with LASTIP

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图 2. 激光器LD1~LD10在120 mA注入电流时的光学特性。(a)归一化的光场分布,灰色标记区域为GaN衬底;(b)光学限制因子;(c)光学损耗

Fig. 2. Optical characteristics of LD1--LD10 when the injection current is 120 mA. (a) Optical field distribution and grey part marks the region of GaN substrate in LDs; (b) optical confinement factor; (c) optical loss

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图 3. 激光器LD1~LD10的阈值电流以及120 mA注入电流时的输出光功率。(a)阈值电流;(b)输出光功率

Fig. 3. Threshold current of LD1--LD10 and output optical power when injection current is 120 mA. (a) Threshold current; (b) output optical power

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图 4. 激光器LD11~LD20在120 mA注入电流时的光学特性。(a)归一化的光场分布,灰色标记区域为GaN衬底;(b)光学限制因子;(c)光学损耗

Fig. 4. Optical characteristics of LD11--LD20 when injection current is 120 mA. (a) Normalized optical field distributions and grey part marks the region of GaN substrate in LDs; (b) optical confinement factor; (c) optical loss

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图 5. 激光器LD11~LD20的阈值电流以及120 mA注入电流时的输出光功率。(a)阈值电流;(b)输出光功率

Fig. 5. Threshold current of LD11--LD20 and output optical power when injection current is 120 mA. (a) Threshold current; (b) output optical power

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表 1用于LASTIP计算的GaN基激光器的结构参数

Table1. Structural parameters of GaN-based green LDs calculated by LASTIP

Layer Thickness Dopinglevel /cm-3 n-GaN substrate 1 μm 3×1018 n-Al0.08Ga0.92N (nCL) 0.4--2.5 μm 3×1018 n-In0.05Ga0.95N (LWG) 120 nm 5×1017 2×In0.37Ga0.63N/GaN (DQW) 2.5 nm/17 nm 5×1016 u-In0.02Ga0.98N UWG: LD1--LD10u-In0.05Ga0.95N UWG: LD11--LD20 100 nm 5×1016 p-Al0.2Ga0.8N (EBL) 20 nm 1×1019 p-Al0.08Ga0.92N (pCL) 450 nm 1×1019 p-GaN 150 nm 1×1019 p++-GaN 40 nm 1×1020

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梁锋, 赵德刚, 江德生, 刘宗顺, 朱建军, 陈平, 杨静. 光场分布对GaN基绿光激光器的影响[J]. 中国激光, 2020, 47(7): 0701018. Liang Feng, Zhao Degang, Jiang Desheng, Liu Zongshun, Zhu Jianjun, Chen Ping, Yang Jing. Influence of Optical Field Distribution on GaN-Based Green Laser Diodes[J]. Chinese Journal of Lasers, 2020, 47(7): 0701018.