4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Huan Wang; Lu Guo; Wu Zhao; Guangcan Chen; Dan Lu; Lingjuan Zhao

doi:doi:10.3788/COL201917.111402

Chinese Optics Letters, 2019, 17 (11): 111402, Published Online: Sep. 6, 2019

4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Huan Wang ^1,2,3Lu Guo ^1,2,3Wu Zhao ^1,2,3Guangcan Chen ^1,2,3Dan Lu ^1,2,3,*Lingjuan Zhao ^1,2,3

Author Affiliations

¹ Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³ Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

Basic Information

DOI:	10.3788/COL201917.111402
中图分类号:	--
栏目:	Lasers and laser optics
项目基金:	This work was supported by the National Key Research & Development (R&D) Plan (No. 2016YFB0402301).
收稿日期:	Apr. 4, 2019
修改稿日期:	--
网络出版日期:	Sep. 6, 2019
通讯作者:	Dan Lu (ludan@semi.ac.cn)
备注:	--

Huan Wang, Lu Guo, Wu Zhao, Guangcan Chen, Dan Lu, Lingjuan Zhao. 4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner[J]. Chinese Optics Letters, 2019, 17(11): 111402.

4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

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