4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Huan Wang; Lu Guo; Wu Zhao; Guangcan Chen; Dan Lu; Lingjuan Zhao

doi:doi:10.3788/COL201917.111402

Chinese Optics Letters, 2019, 17 (11): 111402, Published Online: Sep. 6, 2019

4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Huan Wang ^1,2,3Lu Guo ^1,2,3Wu Zhao ^1,2,3Guangcan Chen ^1,2,3Dan Lu ^1,2,3,*Lingjuan Zhao ^1,2,3

Author Affiliations

¹ Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³ Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

Figures & Tables

Fig. 1. (a) Optical microscope picture of the DBR-MLLD laser array, (b) the epitaxial laser wafer structure, (c) scanning electron microscope (SEM) picture of the BJR, (d) gratings, and (e) the access waveguides of the MMI.

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Fig. 2. (a) DBR-MLLD L-I characteristics of the four channels from the MMI output, (b) the DBR-MLLD L-I characteristics of the four channels from the SA output, (c) the L-I characteristics of a typical channel with different bias voltages of the SA. (d)–(f) Measured results when $I_{Gain} = 163 mA$ , with the other section floating: (d) optical spectral width fit, (e) RF spectral width fit, and (f) autocorrelation trace fit.

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Fig. 3. Typical channel lasing characteristics of the DBR-MLLD biased at different conditions. (a1)–(d1) measured optical spectra, (a2)–(d2) measured RF power spectra, (a3)–(d3) measured autocorrelation traces. (a) $V_{SA} = - 0.3 V$ , $I_{Gain} = 111 mA$ , $I_{DBR} = 11.0 mA$ ; (b) $V_{SA} = 0 V$ , $I_{Gain} = 193 mA$ , $I_{DBR} = 9.0 mA$ ; (c) $V_{SA} = - 0.4 V$ , $I_{Gain} = 173 mA$ , $I_{DBR} = 3.3 mA$ ; (d) $V_{SA} = 0 V$ , $I_{Gain} = 163 mA$ , $I_{DBR} = 0 mA$ .

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Fig. 4. Typical channel characteristics: (a) emission peak wavelength ( $W_{P}$ ), (b) pulse repetition frequency (F_r), (c) pulse width, and (d) TBP versus $I_{DBR}$ for $I_{Gain} = 164.1$ , 182.6 mA while all other sections are left floating.

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Fig. 5. (a) Superposition of the four-channel optical spectra, (d) superposition of the four-channel RF spectra, and (c) the autocorrelation trace of the four channels.

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Huan Wang, Lu Guo, Wu Zhao, Guangcan Chen, Dan Lu, Lingjuan Zhao. 4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner[J]. Chinese Optics Letters, 2019, 17(11): 111402.

4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Fig. 1. (a) Optical microscope picture of the DBR-MLLD laser array, (b) the epitaxial laser wafer structure, (c) scanning electron microscope (SEM) picture of the BJR, (d) gratings, and (e) the access waveguides of the MMI.

Fig. 4. Typical channel characteristics: (a) emission peak wavelength ( $W_{P}$ ), (b) pulse repetition frequency (F_r), (c) pulse width, and (d) TBP versus $I_{DBR}$ for $I_{Gain} = 164.1$ , 182.6 mA while all other sections are left floating.

Fig. 5. (a) Superposition of the four-channel optical spectra, (d) superposition of the four-channel RF spectra, and (c) the autocorrelation trace of the four channels.

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4 × 40 GHz mode-locked laser diode array monolithically integrated with an MMI combiner

Fig. 1. (a) Optical microscope picture of the DBR-MLLD laser array, (b) the epitaxial laser wafer structure, (c) scanning electron microscope (SEM) picture of the BJR, (d) gratings, and (e) the access waveguides of the MMI.

Fig. 4. Typical channel characteristics: (a) emission peak wavelength (WP), (b) pulse repetition frequency (Fr), (c) pulse width, and (d) TBP versus IDBR for IGain=164.1, 182.6 mA while all other sections are left floating.

Fig. 5. (a) Superposition of the four-channel optical spectra, (d) superposition of the four-channel RF spectra, and (c) the autocorrelation trace of the four channels.

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Fig. 4. Typical channel characteristics: (a) emission peak wavelength ( $W_{P}$ ), (b) pulse repetition frequency (F_r), (c) pulse width, and (d) TBP versus $I_{DBR}$ for $I_{Gain} = 164.1$ , 182.6 mA while all other sections are left floating.