两类单阿秒脉冲产生技术的相位依赖性分析

为了分析目前国际上现有的两类高次谐波极紫外单阿秒脉冲产生技术——振幅选通技术和偏振选通技术在驱动脉冲场载波-包络相位设置方面的差异，基于这两类单脉冲产生技术基本原理并借助于高次谐波产生3步理论分析模型，半定量分析了这两类技术的驱动光场载波-包络相位依赖性及其差异。结果表明，两者的最佳驱动脉冲场载波-包络相位设置分别为0与0.5π，出现此差异的根本原因是高次谐波现象对驱动光场偏振度的高度依赖性。此分析结果对更短脉宽极紫外阿秒脉冲光源的产生和相关应用具有重要的参考价值。

Abstract

For the sake of understanding the carrier-envelope-phase dependence of the two single-attosecond-pulse generation techniques, i.e., amplitude gating and polarization gating, the influence of carrier-envelope phase of the driving field on the generation of extreme ultraviolet single attosecond pulse with either of the basic techniques was analyzed based on its principle and the three-step scenario of high-harmonic generation. It indicates that the optimal carrier-envelope phases for amplitude gating and polarization gating are 0 and 0.5π respectively, whose difference was induced by the close dependence of high-harmonic generation on the polarization feature of driving field. The results are of great significance to the generation and its related applications of extreme ultraviolet attosecond pulses with narrow pulse duration.

参考文献

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王超, 康轶凡, 田进寿, 刘虎林. 两类单阿秒脉冲产生技术的相位依赖性分析[J]. 激光技术, 2012, 36(4): 516. WANG Chao, KANG Yi-fan, TIAN Jin-shou, LIU Hu-lin. Analysis of phase dependence of the two single-attosecond-pulse generation techniques[J]. Laser Technology, 2012, 36(4): 516.

两类单阿秒脉冲产生技术的相位依赖性分析

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