InN0.01Sb0.99薄膜的红外反射光谱及探测特性和退火的影响
[1] Shan W, Walukiewicz W, AGER J W, et al. Band Anticrossing in GaInNAs Alloys[J]. Physical Review Letters, 1999, 82(6): 1221-1224.
[2] Veal T D, Mahboob I, Mcconville C F. Negative band gaps in dilute InNxSb1-x alloys[J]. Physical Review Letters, 2004, 92(13): 136801.
[3] LINDSAY A, O’REILLY E P, ANDREEV A D, et al. Theory of conduction band structure of InNxSb1-x and GaNxSb1-x dilute nitride alloys[J]. Physical Review B, 2008, 77(16): 165205.
[4] Murdin B N, Kamal-Saadi M, Lindsay A, et al. Auger recombination in long-wavelength infrared InNxSb1-x alloys[J]. Applied Physics Letters, 2001,78(11): 1568-1570.
[5] Chen X Z, Wang Y, Zhang D H, et al. InSbN junction diode fabricated by ion implantation[C]. In PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE, 2008:8-11.
[6] Chen X Z, Zhang D H, Liu W, et al. Narrow band gap InSbN films fabricated by two-step ion-implantation for long wavelength infrared photodetection[C]. In Photonics and Optoelectronic (SOPO), 2010 Symposium on, 2010:19-21.
[7] Osamura K, Naka S, Murakami Y. Preparation and optical properties of Ga1-x In x N thin films[J]. Journal of Applied Physics, 1975, 46(8): 3432-3437.
[8] LI Zhi-Feng, Optical spectroscopy studies on several functional semiconductor materials[D]. Shanghai Institute of Technical Physics(李志锋, 几种半导体功能材料的光谱研究), 中国科学院上海技术物理研究所博士论文, 2000.
[9] Mahboob I, Veal T D, Mcconville C F. Electron dynamics in InNxSb1-x[J], Applied Physics Letters, 2003, 88(11): 2169-2171.
[10] Mahboob, Veal T D, Mcconville C F. Low-energy nitrogen ion implantation of InSb[J]. Journal of Applied Physics, 2004, 96(9): 4935-4938.
[11] Lim K P, Pham H T , Yoon S F, et al. Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy[J], Applied Physics Letters, 2010, 96(16): 161903.
[12] Yang J J, Byung H K, Hyung J L, et al. Electrical transport and energy-band structure in InAs[J]. Physical Revie B, 1982, 26(6): 3151-3164.
[13] Ban D, Luo H, Liu H C, et al. Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb[C] In SPIE Proceedings 5970, Photonic Applications in Devices and Communication Systems, 59700C, 2005.
[14] Ashley T, Burke T M, Pryce G J, et al. InSb1-x Nx growth and devices[J]. Solid-State Electronics, 2003, 47(3): 387-394.
黄亮, 景友亮, 刘希辉, 李倩, 陈平平, 李志锋. InN0.01Sb0.99薄膜的红外反射光谱及探测特性和退火的影响[J]. 红外与毫米波学报, 2015, 34(4): 437. HUANG Liang, JING You-Liang, LIU Xi-Hui, LI Qian, CHEN Ping-Ping, LI Zhi-Feng. Far-infrared reflectance spectra and photoelectric characteristics of InN0.01Sb0.99 thin films and the annealing effects[J]. Journal of Infrared and Millimeter Waves, 2015, 34(4): 437.