外延单片式激光二极管抽运被动调Q微激光器

饶海波; 廖云; 成建波; 闫平; 王云祥

光学学报, 2007, 27 (1): 90, 网络出版: 2007-01-22

外延单片式激光二极管抽运被动调Q微激光器

Laser Diode-Pumped Passively Q-Switched Monolithic Microchip Laser Based on Liquid Phase Epitaxy

论文大纲

饶海波 ^1,*廖云 ¹成建波 ¹闫平 ²王云祥 ^1,2

作者单位

¹ 电子科技大学光电信息学院, 成都 610054

² 清华大学精密仪器与机械学系, 北京100084

激光器微片激光器液相外延单片式被动调Q lasers microchip laser liquid phase epitaxy monolithic passively Q-switching

摘要

基于液相外延工艺, 实现了一种结构新颖的单片式被动调Q微片激光器。采用了在激光介质Nd3+:YAG表面直接液相外延生长一层具有饱和吸收特性的Cr4+:YAG膜的微谐振腔的结构, 由于是同质外延生长过程, 能够确保饱和吸收体与增益介质间(Nd3+:YAG/Cr4+:YAG)良好的界面特性。采用光纤耦合激光二极管, 在激光二极管输出为1 W的抽运条件下, 实现了峰值功率近千瓦、稳定重复频率在4 kHz以上、脉宽1.8 ns、TEM00单横模式、波长1.064 μm的调Q脉冲序列输出。在对新型单片式微激光器的性能报道的基础上, 阐述了外延单片式结构及其相应工艺的潜在优势。

Abstract

A novel monolithic passively Q-switched microchip laser is presented with a microcavity by directly growing a thin Cr4+:YAG film with saturable absorption on the surface of the laser medium Nd3+:YAG by liquid phase epitaxy. Because of the homogeneous epitaxial process, a good interface property is achieved between active medium Nd3+:YAG and saturable absorber Cr4+:YAG. Pumped by 1 W output of a fiber-coupled laser diode, the novel laser produces Q-switched pulses sequence with wavelength 1.064 μm, pulse duration 1.8 ns, pulse repetition over 4 kHz, TEM00 mode and peak power nearly 1 kW. Except for the detailed descriptions of the performance of the laser, the potential advantages of the structure and relevant processes are also discussed.

参考文献

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饶海波, 廖云, 成建波, 闫平, 王云祥. 外延单片式激光二极管抽运被动调Q微激光器[J]. 光学学报, 2007, 27(1): 90. 饶海波, 廖云, 成建波, 闫平, 王云祥. Laser Diode-Pumped Passively Q-Switched Monolithic Microchip Laser Based on Liquid Phase Epitaxy[J]. Acta Optica Sinica, 2007, 27(1): 90.

外延单片式激光二极管抽运被动调Q微激光器

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