红外与毫米波学报, 2010, 29 (3): 161, 网络出版: 2010-07-21  

GaN基肖特基器件中的反常电容特性 下载: 597次

ANOMALOUS CAPACITANCE OF GaN-BASED SCHOTTKY DIODES
作者单位
中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083
摘要
研究了测试频率为0.3~1.5MHz时GaN基肖特基器件的电容特性.实验发现,在Au/i-GaN肖特基器件的电容-电压(C-V)特性曲线中,出现了峰和负值电容,而Au/i-Al0.45Ga0.55N肖特基器件的C-V特性曲线中则既没有峰也没有负值电容的出现.对肖特基器件的电流-电压(I-V)特性和C-V特性进行参数提取和分析后认为,负值电容和峰的出现源于界面态的俘获和损耗,但较大的串联电阻将减弱界面态的作用.
Abstract
The capacitance-voltage (C-V) measurements of GaN-based Schottky diodes were carried out in the frequency range of 0.3~1.5MHz. Anomalous peaks and negative value of capacitance were observed in the C-V plots of Au/i-GaN Schottky diodes under forward bias, while neither of them was seen in the plots of Au/i-Al0.45Ga0.55N Schottky diodes. Based on the parameters extracted from the current-voltage (I-V) and C-V plots of GaN and Al0.45Ga0.55N Schottky diodes, the peak and negative capacitance are ascribed to the capture and loss of interface charges. These processes are greatly suppressed when there exists a huge series resistance in the diode.
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储开慧, 张文静, 许金通, 李向阳. GaN基肖特基器件中的反常电容特性[J]. 红外与毫米波学报, 2010, 29(3): 161. CHU Kai-Hui, ZHANG Wen-Jing, XU Jin-Tong, LI Xiang-Yang. ANOMALOUS CAPACITANCE OF GaN-BASED SCHOTTKY DIODES[J]. Journal of Infrared and Millimeter Waves, 2010, 29(3): 161.

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