Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响
陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013, 34(12): 1646.
CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013, 34(12): 1646.
[1] Dennis C, Takashi E, Yoshiki Y, et al. Uniform growth of AlGaN/GaN high electron mobility transistors on 200 mm silicon (111) substrate ［J］. Appl. Phys. Exp., 2013, 6(2):026501-1-5.
[2] Luo W J, Wang X L, Xiao H L, et al. Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD ［J］. Microelectron J., 2008, 39:1108-1111.
[3] Wang T, Lachab M, Nakagawa D, et al. Investigation of two-dimensional electron gas in AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD) ［J］. J. Cryst. Growth, 1999, 203(3):443-446.
[5] Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures ［J］. J. Appl. Phys., 2000, 87(1):334-344.
[6] Zhang Y F, Smorchkova I P, Elsass C R, et al. Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies ［J］. J. Appl. Phys., 2000, 87(11):7981-7987.
[7] Wang X L, Wang C M, Hu G X, et al. MOCVD-grown high-mobility AlGaN/AlN/GaN HEMT structure on sapphire substrate ［J］. J. Cryst. Growth, 2007, 298:791-793.
[8] Zhao G Y, Ishikawa H, Egawa T, et al. Electron mobility on AlGaN/GaN heterostructure interface ［J］. Physica E, 2000, 7(3-4):963-966.
[9] Arulkumaran S, Egawa T, Isikawa H, et al. Effects of annealing on Ti, Pd, and Ni/n-AlGaN Schottky diodes ［J］. IEEE Trans. Elecron. Dev., 2001, 48(3):573-580.
[10] Zhao G Y, Hiroyasu I, Takashi E, et al. High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition ［J］. Jpn. J. Appl. Phys., 2000, 39:1035-1038.
[11] Fieger M, Eickelkamp M, Rahimzadeh K L, et al. MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates ［J］. J. Cryst. Growth, 2007, 298:843-847.
[12] Ding G J, Guo L W, Xing Z G, et al. Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire ［J］. Sci. China Phys. Mech. Astron., 2010, 53(1):49-53.
[13] Smochkova I P, Elsass C R, Ibbetson J P, et al. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy ［J］. J. Appl. Phys., 1999, 86(8):4520-4526.
[14] Xue J S, Hao Y, Zhang J C, et al. Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers ［J］. Sci. China Tech. Sci., 2010, 53(6):1567-1571.
[15] Hsu L. Electron mobility in AlGaN/GaN heterostructures ［J］. Phys. Rev. B, 1997, 56(3):1520-1528.
[16] Keller S, Parish G, Fini P T, et al. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures ［J］. J. Appl. Phys., 1999, 86(10):5850-5857.
陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013, 34(12): 1646. CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013, 34(12): 1646.
PDF全文
