发光学报, 2013, 34 (12): 1646, 网络出版: 2013-12-20 复制并引用该论文  本文已被引 2 次  被引通知

陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的Al_xGa_1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013, 34(12): 1646. CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of Al_xGa_1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013, 34(12): 1646.