Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响
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陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 朱建军, 张宝顺. Al组分对MOCVD制备的AlxGa1-xN/AlN/GaN HEMT电学和结构性质的影响[J]. 发光学报, 2013, 34(12): 1646. CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHU Jian-jun, ZHANG Bao-shun. Influence of Al Composition on Electrical and Structural Properties of AlxGa1-xN/AlN/GaN HEMT Materials Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013, 34(12): 1646.
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