通过荧光光谱研究了放电等离子体氧化的α-Si:H薄膜的荧光特性，在450nm～500nm范围内常温下观察到强蓝光发射，发光强度随沉积氧化的周期数增加而增强。发射带呈七峰结构，位置分别为460nm、465nm、472nm、478nm、485nm、490nm、496nm。实验结果直接证明了蓝光发射与缺陷能级有关，其起源于Si-O结合特定组态而形成的发光中心。

Luminescence characteristies of α-Si∶H thin film oxidized by low-temperature plasma was investigated. Strong blue photoluminescence peaks centered at 460 nm,465 nm,472 nm,478 nm,485 nm,490 nm and 496 nm ranging from 450 nm～500 nm were observed at room temperature. The result shows that strength of the photoluminescence peak increases with the cycle number of deposition-oxidation during preparation. Blue luminescence peaks originate luminescence centers related to O-Si defect.