Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering
[1] Look D C. Recent advances in ZnO materials and devices[J].Mater. Sci. Eng. B, 2001, 80(1-3): 383-387.
[2] zgür , Alivov Ya I, Liu C, et al. A comprehensive review of ZnO materials and devices[J]. J.Appl.Phys, 2005, 98: 041301.
[3] WANG Bin, ZHAO Yue, MIN Jia-hua, et al. Ag-N dual-accept doping for the fabrication of p-type ZnO[J]. Appl. Phys.A, 2009, 94: 715-718.
[4] KONG Jie-ying, CHU Sheng, Olmedo M, et al. Dominant ultraviolet light emissionsin packed ZnO columnar homojunction diodes[J]. Appl.Phys.Lett, 2008, 93: 132113.
[5] Ryu Y R, Kim W J, White H W, et al. Fabrication of homostructural ZnO p-n junctions[J]. J.Crystal Growth, 2000, 219: 419-422.
[6] Pearton S J, Norton D P, Tien L C, et al. Modeling and fabrication of ZnO nanowire transistors [J]. IEEE Transaction on electron devices, 2008, 55(11): 3012-3019.
[7] Walukiewicz W. Defect formation and diffusion in heavily doped semiconductors[J]. Phys.Rev.B, 1994, 50(8): 5221-5225.
[8] Garcia A, Northrup J E. Compensation of p-type doping in ZnSe: the role of impurity-native defect complexes[J]. Phys.Rev.Lett, 1995, 74(7): 1131-1134.
[9] Laks D B, Van de Walle C G, Neumark G F, et al. Role of native defects in wide-band-gap semiconductors[J]. Phys. Rev.Lett, 1991, 66(5): 648-651.
[10] Van de Walle C G, Laks D B, Neumark G F, et al. First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe[J]. Phys.Rew.B, 1993, 47(15): 9425-9434.
[11] Yamamoto T, Yoshida H K. Unipolarity of ZnO with a wide-band gap and its solution using codoping method[J]. J. Crystal Growth, 2000, 214/215: 552-555.
[12] Li Y F, Yao B, Lu Y M, et al. Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ad initio study[J]. J.Appl.Phys., 2008, 104(8): 083516.
[13] Dai L P, Deng H, Zang J D, et al. The effect of annealing temperature on the properties of ZnO films with preferential nonpolar plane orientation by SSCVD[J]. J.Mater Sci, 2008, 43(1): 312-315.
[14] Abdul H H, Abdullah M J, Aziz A A. Structural and electrical properties of p-type ZnO thin films[J]. Current issues of physics in Malasia, AIP conference proceedings, 2008, 1017: 134-138.
[15] Lin S S, Ye Z Z, Lu J G, et al. Na doping concentration tuned conductivity of ZnO films via pulsed laser deposition and electroluminescence from ZnO homojunction on silicon substrate[J]. J.Phys.D: Appl.Phys., 2008, 41(15): 155114.
[16] Li J B, Wei S H, Li S S, et al. Design of shallow acceptors in ZnO: first-principles band-structure calculations[J]. Phys.Rev.B, 2006, 74(8): 081201(R).
[17] Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: the impurity perspective[J]. Phys.Rev. B, 2002, 66(7): 073202.
[18] Lee E C, Chang K J. Possible p-type doping with group-I elements in ZnO[J]. Phys.Rev.B, 2004, 70(11):115210.
[19] Wardle M G, Goss J P, Briddon P R, et al. Theory of Li in ZnO: a limitation for Li-based p-type doping[J]. Phys. Rev.B, 2005, 71(15): 155205.
[20] ZENG Yu-jia, YE Zhi-zhen, XU Wei-zhong, et al. Realization of p-type ZnO films via monodoping of Li acceptor [J]. J.Crystal Growth, 2005, 283(1-2): 180-184.
JI Zhen-guo, LIU Fang, HE Hai-yan, HAN Wei-zhi. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering[J]. 半导体光子学与技术, 2009, 15(3): 139. JI Zhen-guo, LIU Fang, HE Hai-yan, HAN Wei-zhi. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering[J]. Semiconductor Photonics and Technology, 2009, 15(3): 139.
PDF全文
