长波InAs/GaSb II类超晶格红外探测器

报道了50%截止波长为12.5μm的InAs/GaSb II类超晶格长波红外探测器材料及单元器件.实验采用分子束外延技术在GaSb衬底上生长超晶格材料.吸收区结构为15ML(InAs)/7ML(GaSb)，器件采用PBIN的多层异质结构以抑制长波器件暗电流.在77K温度下测试了单元器件的电流-电压(I-V)特性，响应光谱和黑体响应.在该温度下，光敏元大小为100μm×100μm的单元探测器RmaxA为2.5Ωcm2，器件的电流响应率为1.29A/W，黑体响应率为2.1×109cmHz1/2/W，11μm处量子效率为14.3%.采用四种暗电流机制对器件反向偏压下的暗电流密度曲线进行了拟合分析，结果表明起主导作用的暗电流机制为产生复合电流.

Abstract

A 12.5 μm long wavelength infrared detector based on InAs/GaSb Type-II superlattice was presented in this work. Superlattice materials were grown on GaSb substrates using MBE technology. Absorber structure for long wavelength detector was designed to be 15ML(InAs)/7ML(GaSb). The detector used a PBIN multiple heterostructures to decrease the dark current. The dark current I-V curve, responsivity spectra and blackbody current responsivity were measured at 77 K. At this temperature, RmaxA product was 2.5 Ωcm2 for the device with a photo sensitive area of 100 μm× 100μm. At zero bias, a current responsivity of 1.29 A/W was measured for the detector, which correspond to a blackbody detectivity of 2.1×109 cmHz1/2/W. Quantum efficiency at 11 μm was measured to be 14.3%. Dark current characteristics were simulated with four kinds of probable transport mechanisms. The results showed that the dominated dark current of the detector is Generation-Recombination current.

参考文献

[1] Sa-Halasz G A, Tsu R, Esaki L, A new semiconductor superlattice[J]. Appl. Phys. Lett. , 1977,30:651653

[2] Johnson J L, Samoska L A,Gossard A.C., et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb supperlattice in heterojunctions with GaSb[J]. J. Appl. Phys. 1996, 80:11161127

[3] Razeghi M, Wei Y, Bae J, et al. Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs[J]. Proceedings of SPIE the Internation Society for Optical Engineering, 2003, 5246:501511

[4] Rogalski A. Material consideration for third generation infrared photon detectors[J]. Infrared Physics and Technology, 2007, 50:240252

[5] Soibel A, Ting D Z-Y, Hill C J, et al. Gain and noise of high-performance long wavelength superlattice infrared detectors[J], Appl. Phys. Lett. 2010, 96: 111102

[6] Haddadi A, Darvish S R, Chen G, et al. High Operability 1024×1024 Long Wavelength Infrared Focal Plane Array Base on Type-II InAs/GaSb Superlattice, AIP Conf. Proc. 2011, 1416: 5658

[7] Nguyen B M, Hoffman D, Delaunay P Y, et al. Band edge tenability of M-structure for heterojunction design in Sb based Type-II superlattice photodiodes[J]. A ppl. Phys. Lett. 2008, 93: 163502

[8] Ting D Z.-Y, Hill C J, Soibel A, et al, A high-performance long wavelength superlattice complementary barrier infrared detector[J], Appl. Phys. Lett. 2009, 95: 183502

[9] Gautam N, Plis E, Kim H S, et al. Heterostructure Band Engineering of Type-II InAs/GaSb Superlattice based Longwave Infrared Photodiodes using Unipolar Current Blocking Barriers[J]. Proc. Of SPIE， 2010, Vol. 7660, doi:10.1117/12.849889

[10] Xu Qing-qing, Chen Jian-xin, Zhou Yi, et al. Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy. Journal of Infrared and Millimeter Waves. (徐庆庆,陈建新,周易,等. InAs/GaSb超晶格中波焦平面材料的分子束外延技术.红外毫米波学报), 2011,30(5):406408.

[11] Gin A, Wei Y, Bae J, et al. Passivation of Type-II InAs/GaSb superlattice photodiodes[J], Thin Solid Films， 2004, 447: 489492

[12] Nguyen J, Ting D Z, Hill C J, et al. Dark current analysis of InAs/GaSb superlattice at low temperatures[J], Infrared Physics and Technology 2009, 52: 317321

[13] Wei Yajun ，Razeghi Manijeh. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering [J]. Phys. Rev. B， 2004, 69: 085316

[14] Zhou Yi, Chen Jian-xin, He Li. Band structure calculation of InAs/GaSb superlattice under 4 layers model. J.Infrared Millim.Waves, (周易，陈建新，何力.四层结构模型下的InAs/GaSb超晶格材料能带计算.红外毫米波学报), 2013,32:(1):13-17

周易, 陈建新, 徐庆庆, 徐志成, 靳川, 许佳佳, 金巨鹏, 何力. 长波InAs/GaSb II类超晶格红外探测器[J]. 红外与毫米波学报, 2013, 32(3): 210. ZHOU Yi, CHEN Jian-Xin, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, XU Jia-Jia, JIN Ju-Peng, HE Li. Long wavelength infrared detector based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2013, 32(3): 210.

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