半导体基片在10.6 μm激光局域加热时的温度上升
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吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. 半导体基片在10.6 μm激光局域加热时的温度上升[J]. 中国激光, 2004, 31(7): 870. 吴云峰, 叶玉堂, 吴泽明, 杨先明, 秦宇伟. Temperature Rise on a Semiconductor Substrate Locally Heated by 10.6 μm Laser Beam[J]. Chinese Journal of Lasers, 2004, 31(7): 870.