光学学报, 2018, 38 (9): 0902001, 网络出版: 2019-05-09
原子芯片上指数型布居增长的原子输运 
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Atom Transport with Exponentially Growing Population on an Atom Chip
图 & 表
图 1. (a)原子芯片产生双阱示意图。红线为载流导线,箭头表示电流方向,B0是沿y方向的偏置磁场,曲线U表示势阱沿x轴的分布;(b)双阱模型沿x轴的势能分布。初始势阱为实线所示,随着左侧势阱阱底抬升(虚线),原子逐渐由左侧势阱转移至右侧势阱中,同时截止能量提高。点线和点划线分别为原子输运开始前和开始后的截止能量,粗圆点代表囚禁在势阱中的原子,箭头为原子输运方向
Fig. 1. (a) Diagram of the double-well trap created by the atom chip. The red lines represent current-carrying wires while the arrows indicate the direction of current. B0 is the bias magnetic field in y direction. Curve U shows the potential distribution along the x axis; (b) potential distribution of the double-well trap model along the x axis. The initial double-well trap is shown as the solid line. With the uplift of the bottom of the left sub-well (dashed line),the atoms are gradually transported f
图 2. (a)左侧势阱的初始原子数不同时,右侧势阱内原子数随时间的变化曲线。选取输运初始阶段(阴影内的曲线段,即10.9 msFig. 2. (a) The evolution of the atom number in the right sub-well with time, as the initial atom number in the left sub-well is different. The gain of atom number can be obtained by fitting the curve at the beginning of transport (curve segment in the shadow, namely 10.9 ms
Fig. 2. (a) The evolution of the atom number in the right sub-well with time, as the initial atom number in the left sub-well is different. The gain of atom number can be obtained by fitting the curve at the beginning of transport (curve segment in the shadow, namely 10.9 ms
图 3. (a)当改变左侧阱内原子云的初始温度时,总原子数(实线)和右侧阱原子数(虚线)随时间的变化。对阴影内的曲线段(即0.07×105Fig. 3. (a) The evolution of the total atom number (solid lines) and the atom number in the right sub-well (dashed lines) with time, as the initial temperature of the atomic cloud in the left sub-well is different. The gain of atom number can be obtained by fitting the curve segment in the shadow (namely 0.07×105
Fig. 3. (a) The evolution of the total atom number (solid lines) and the atom number in the right sub-well (dashed lines) with time, as the initial temperature of the atomic cloud in the left sub-well is different. The gain of atom number can be obtained by fitting the curve segment in the shadow (namely 0.07×105
图 4. (a)左侧势阱变浅所用时间不同时,右侧势阱内的原子数变化。对阴影内的曲线段(即0.07×105Fig. 4. (a) The evolution of the atom number in the right sub-well with time, as the time of shallowing for the left sub-well is different. The gain of atom number can be obtained by fitting the curve segment in the shadow (namely 0.07×105
Fig. 4. (a) The evolution of the atom number in the right sub-well with time, as the time of shallowing for the left sub-well is different. The gain of atom number can be obtained by fitting the curve segment in the shadow (namely 0.07×105
赵子豪, 王晓晨, 李博, 李萌, 蒋小军, 钱军, 李晓林. 原子芯片上指数型布居增长的原子输运[J]. 光学学报, 2018, 38(9): 0902001. Zihao Zhao, Xiaochen Wang, Bo Li, Meng Li, Xiaojun Jiang, Jun Qian, Xiaolin Li. Atom Transport with Exponentially Growing Population on an Atom Chip[J]. Acta Optica Sinica, 2018, 38(9): 0902001.
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