带间级联激光器性能对结构变化的耐受性研究

林羽喆; Jeremy A. MASSENGALE; 黄文祥; 杨瑞青; Tetsuya D. MISHIMA; Michael B. SANTOS

doi:doi:10.11972/j.issn.1001-9014.2020.02.001

红外与毫米波学报, 2020, 39 (2): 137, 网络出版: 2020-04-29

带间级联激光器性能对结构变化的耐受性研究

Examination of the durability of interband cascade lasers against structural variations

林羽喆 ^1,2,3Jeremy A. MASSENGALE ^2,4黄文祥 ^2,4杨瑞青 ^2,*Tetsuya D. MISHIMA ⁴Michael B. SANTOS ⁴

作者单位

¹ Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083, China

² School of Electrical and Computer Engineering，University of Oklahoma，Norman 73019，USA

³ Center of Materials Science and Optoelectronics Engineering，University of the Chinese Academy of Sciences，Beijing 100049，China

⁴ Homer L. Dodge Department of Physics and Astronomy，University of Oklahoma，Norman 73019，USA

图 & 表

图 1. GaSb基带间级联激光器层结构示意图

Fig. 1. Schematic drawing of layer structure for GaSb-based ICLs

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图 2. M368（上）、M370（中）和模拟（下）的X射线衍射图，曲线是GaSb衬底上（004）晶面附近所做的ω-2θ扫描（为了清晰起见，曲线已上下平移）

Fig. 2. X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity

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图 3. 150μm条宽M370激光器连续模式下电流电压光功率曲线，插图是100μm条宽器件在不同热沉温度下的连续激光光谱

Fig. 3. Current-voltage-light characteristics for a 150-μm-wide device from M370 in cw operation. The inset is the cw lasing spectrum from a 100-μm-wide device at a various heat-sink temperature

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图 4. 宽脊带间级联激光器的激射波长随温度变化趋势，插图是300K脉冲激光光谱（M368和M370）

Fig. 4. Lasing wavelength of broad-area ICLs. Inset: pulsed lasing spectra (M368 and M370) at 300 K

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图 5. M368和M370器件的阈值电流密度随温度变化趋势（符号和颜色与图4一致），插图是三个器件接近阈值时的脉冲光谱

Fig. 5. Threshold current density vs temperature for devices from wafers M368 and M370. Symbols and colors are consistent with those in Fig.4. Two insets are pulsed lasing spectra for three devices near their thresholds

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林羽喆, , 黄文祥, 杨瑞青, , . 带间级联激光器性能对结构变化的耐受性研究[J]. 红外与毫米波学报, 2020, 39(2): 137. Yu-Zhe LIN, Jeremy A. MASSENGALE, Wen-Xiang HUANG, Rui-Qing YANG, Tetsuya D. MISHIMA, Michael B. SANTOS. Examination of the durability of interband cascade lasers against structural variations[J]. Journal of Infrared and Millimeter Waves, 2020, 39(2): 137.

带间级联激光器性能对结构变化的耐受性研究

图 1. GaSb基带间级联激光器层结构示意图

Fig. 1. Schematic drawing of layer structure for GaSb-based ICLs

图 2. M368（上）、M370（中）和模拟（下）的X射线衍射图，曲线是GaSb衬底上（004）晶面附近所做的ω-2θ扫描（为了清晰起见，曲线已上下平移）

Fig. 2. X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity

图 3. 150μm条宽M370激光器连续模式下电流电压光功率曲线，插图是100μm条宽器件在不同热沉温度下的连续激光光谱

Fig. 3. Current-voltage-light characteristics for a 150-μm-wide device from M370 in cw operation. The inset is the cw lasing spectrum from a 100-μm-wide device at a various heat-sink temperature

图 4. 宽脊带间级联激光器的激射波长随温度变化趋势，插图是300K脉冲激光光谱（M368和M370）

Fig. 4. Lasing wavelength of broad-area ICLs. Inset: pulsed lasing spectra (M368 and M370) at 300 K

图 5. M368和M370器件的阈值电流密度随温度变化趋势（符号和颜色与图4一致），插图是三个器件接近阈值时的脉冲光谱

Fig. 5. Threshold current density vs temperature for devices from wafers M368 and M370. Symbols and colors are consistent with those in Fig.4. Two insets are pulsed lasing spectra for three devices near their thresholds

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带间级联激光器性能对结构变化的耐受性研究

图 1. GaSb基带间级联激光器层结构示意图

Fig. 1. Schematic drawing of layer structure for GaSb-based ICLs

图 2. M368（上）、M370（中）和模拟（下）的X射线衍射图，曲线是GaSb衬底上（004）晶面附近所做的ω-2θ扫描（为了清晰起见，曲线已上下平移）

Fig. 2. X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity

图 3. 150μm条宽M370激光器连续模式下电流电压光功率曲线，插图是100μm条宽器件在不同热沉温度下的连续激光光谱

Fig. 3. Current-voltage-light characteristics for a 150-μm-wide device from M370 in cw operation. The inset is the cw lasing spectrum from a 100-μm-wide device at a various heat-sink temperature

图 4. 宽脊带间级联激光器的激射波长随温度变化趋势，插图是300K脉冲激光光谱（M368和M370）

Fig. 4. Lasing wavelength of broad-area ICLs. Inset: pulsed lasing spectra (M368 and M370) at 300 K

图 5. M368和M370器件的阈值电流密度随温度变化趋势（符号和颜色与图4一致），插图是三个器件接近阈值时的脉冲光谱

Fig. 5. Threshold current density vs temperature for devices from wafers M368 and M370. Symbols and colors are consistent with those in Fig.4. Two insets are pulsed lasing spectra for three devices near their thresholds

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