中国激光, 2014, 41 (6): 0617001, 网络出版: 2014-05-19  

利用有源多模干涉器提高InGaN超辐射发光二极管的输出功率

Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer
臧志刚 1,2,3,*余健辉 1,2张军 1,2,3陈哲 1,2,3
作者单位
1 暨南大学光电信息与传感技术广东省普通高校重点实验室, 广东 广州 510632
2 暨南大学光电工程系, 广东 广州 510632
3 广东省半导体照明产业联合创新中心, 广东 佛山 510033
引用该论文

臧志刚, 余健辉, 张军, 陈哲. 利用有源多模干涉器提高InGaN超辐射发光二极管的输出功率[J]. 中国激光, 2014, 41(6): 0617001.

Zang Zhigang, Yu Jianhui, Zhang Jun, Chen Zhe. Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer[J]. Chinese Journal of Lasers, 2014, 41(6): 0617001.

参考文献

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臧志刚, 余健辉, 张军, 陈哲. 利用有源多模干涉器提高InGaN超辐射发光二极管的输出功率[J]. 中国激光, 2014, 41(6): 0617001. Zang Zhigang, Yu Jianhui, Zhang Jun, Chen Zhe. Enhanced Output Power of InGaN Superluminescent Diode Using Active Multi-Mode Interferometer[J]. Chinese Journal of Lasers, 2014, 41(6): 0617001.

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