Raman Scattering and Photoluminescence in Ge-implanted GaN Films

LU Dian-qing; LIU Xue-dong

半导体光子学与技术, 2006, 12 (2): 73, 网络出版: 2011-08-18

Raman Scattering and Photoluminescence in Ge-implanted GaN Films

论文大纲

LU Dian-qing LIU Xue-dong

作者单位

Dept. of Math and Physics, Huaihai Institute of Technology, Lianyungang 222005, CHN

GaN Ge ion implantation Raman scattering Photoluminescence

摘要

Abstract

The investigations on Ge-implanted GaN films grown by MOCVD and then annealed at 1 100 ℃ under ammonia ambient have been carried out. With increasing Ge implantation dose, four additional peaks arise at wave numbers of 260, 314, 428 and 670 cm-1in Ramam spectra. In PL spectra, the relative intensity of the band-edge emission compared to the PL-band centered at 2.66 eV and the yellow band decreases with increase of Ge-implanted dose. The modes of 260 and 314 cm-1are attributed to disorder-activated Raman scattering, whereas the modes of 428 and 670 cm-1are assigned to local vibrations of vacancies and vacancy-related complexes. The PL-band centered at 2.66 eV and the yellow band is also related to these vacancy defects. The new Raman peak at 301 cm-1for the sample annealed only 5 min originates from Ge clusters due to deficient annealing.

参考文献

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LU Dian-qing, LIU Xue-dong. Raman Scattering and Photoluminescence in Ge-implanted GaN Films[J]. 半导体光子学与技术, 2006, 12(2): 73. LU Dian-qing, LIU Xue-dong. Raman Scattering and Photoluminescence in Ge-implanted GaN Films[J]. Semiconductor Photonics and Technology, 2006, 12(2): 73.

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