Subwavelength grating waveguide devices in silicon-on-insulators for integrated microwave photonics (Invited Paper)

Lawrence R. Chen

doi:doi:10.3788/COL201715.010004

Chinese Optics Letters, 2017, 15 (1): 010004, Published Online: Jul. 26, 2018

Subwavelength grating waveguide devices in silicon-on-insulators for integrated microwave photonics (Invited Paper) Download： 881次

Lawrence R. Chen ^*

Author Affiliations

Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 0E9, Canada

Figures & Tables

Fig. 1. SWG waveguide in SOI: (a) basic structure, (b) waveguide cross-section, and (c) top view of am SWG taper used to couple light between an SWG waveguide and a conventional waveguide.

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Fig. 2. Conventional MRR based on SWG waveguides in SOI: (a) schematic and (b) SEM prior to top oxide cladding deposition, and measured through responses (normalized) for a ring radius of (c) 15, (d) 20, and (c) 25 μm.

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Fig. 3. SWG racetrack resonator: (a) layout, (b) detailed view, and (c) measured through (blue) and drop (red) responses (normalized). See text for device parameters.

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Fig. 4. SWG BG: (a) schematic of SWG BG formed by interleaving two SWG waveguides of different duty cycles, (b) device layout for experimental demonstration, and (c) SEM of the fabricated SWG BG prior to the oxide cladding deposition.

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Fig. 5. (a) Measured transmission spectrum of SWG BG and simple SWG waveguide (see text for parameters). The difference in transmission responses is due in part to the spectral response of the Y-branch (optimized for ∼1550 nm), which is present in the SWG BG only. (b) Zoom of the transmission (blue) and reflection (green) responses about the resonant peak at 1546.8 nm.

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Fig. 6. (a) Schematic of the proposed SWG CDC in SOI, (b) layout of a device with LC=50 μm, (c) measured drop (red) and through (blue) responses (see text for device parameters), and (d) 3D FDTD simulated response for SWG CDC with Λ=378 nm, g=200 nm, and LC=100 μm.

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Fig. 7. (a) Schematic of MZI incorporating SWG waveguides with different duty cycles D1 and D2 in each arm. (b) Measured spectral responses of MZIs with ΔD=1%, 2%, and 3%.

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Fig. 8. (a) Schematic of OTTDL based on an array of 4 SWG waveguides and experimental setup for microwave phase shift measurements. (b) Measured RF phase shift vs. modulation frequency for an optical carrier at 1565 nm.

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Lawrence R. Chen. Subwavelength grating waveguide devices in silicon-on-insulators for integrated microwave photonics (Invited Paper)[J]. Chinese Optics Letters, 2017, 15(1): 010004.

Subwavelength grating waveguide devices in silicon-on-insulators for integrated microwave photonics (Invited Paper) Download： 881次

Fig. 1. SWG waveguide in SOI: (a) basic structure, (b) waveguide cross-section, and (c) top view of am SWG taper used to couple light between an SWG waveguide and a conventional waveguide.

Fig. 2. Conventional MRR based on SWG waveguides in SOI: (a) schematic and (b) SEM prior to top oxide cladding deposition, and measured through responses (normalized) for a ring radius of (c) 15, (d) 20, and (c) 25 μm.

Fig. 3. SWG racetrack resonator: (a) layout, (b) detailed view, and (c) measured through (blue) and drop (red) responses (normalized). See text for device parameters.

Fig. 4. SWG BG: (a) schematic of SWG BG formed by interleaving two SWG waveguides of different duty cycles, (b) device layout for experimental demonstration, and (c) SEM of the fabricated SWG BG prior to the oxide cladding deposition.

Fig. 6. (a) Schematic of the proposed SWG CDC in SOI, (b) layout of a device with LC=50 μm, (c) measured drop (red) and through (blue) responses (see text for device parameters), and (d) 3D FDTD simulated response for SWG CDC with Λ=378 nm, g=200 nm, and LC=100 μm.

Fig. 7. (a) Schematic of MZI incorporating SWG waveguides with different duty cycles D1 and D2 in each arm. (b) Measured spectral responses of MZIs with ΔD=1%, 2%, and 3%.

Fig. 8. (a) Schematic of OTTDL based on an array of 4 SWG waveguides and experimental setup for microwave phase shift measurements. (b) Measured RF phase shift vs. modulation frequency for an optical carrier at 1565 nm.

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Subwavelength grating waveguide devices in silicon-on-insulators for integrated microwave photonics (Invited Paper) Download： 881次

Fig. 1. SWG waveguide in SOI: (a) basic structure, (b) waveguide cross-section, and (c) top view of am SWG taper used to couple light between an SWG waveguide and a conventional waveguide.

Fig. 2. Conventional MRR based on SWG waveguides in SOI: (a) schematic and (b) SEM prior to top oxide cladding deposition, and measured through responses (normalized) for a ring radius of (c) 15, (d) 20, and (c) 25 μm.

Fig. 3. SWG racetrack resonator: (a) layout, (b) detailed view, and (c) measured through (blue) and drop (red) responses (normalized). See text for device parameters.

Fig. 4. SWG BG: (a) schematic of SWG BG formed by interleaving two SWG waveguides of different duty cycles, (b) device layout for experimental demonstration, and (c) SEM of the fabricated SWG BG prior to the oxide cladding deposition.

Fig. 6. (a) Schematic of the proposed SWG CDC in SOI, (b) layout of a device with LC=50 μm, (c) measured drop (red) and through (blue) responses (see text for device parameters), and (d) 3D FDTD simulated response for SWG CDC with Λ=378 nm, g=200 nm, and LC=100 μm.

Fig. 7. (a) Schematic of MZI incorporating SWG waveguides with different duty cycles D1 and D2 in each arm. (b) Measured spectral responses of MZIs with ΔD=1%, 2%, and 3%.

Fig. 8. (a) Schematic of OTTDL based on an array of 4 SWG waveguides and experimental setup for microwave phase shift measurements. (b) Measured RF phase shift vs. modulation frequency for an optical carrier at 1565 nm.

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