中国激光, 2020, 47 (7): 0701020, 网络出版: 2020-07-10 复制并引用该论文  本文已被引 4 次  被引通知

图 & 表

图 1. VECSEL结构与芯片内部光场分布。(a) VECSEL系统示意图;(b)增益芯片内层光场分布

Fig. 1. VECSEL structure and light field distribution inside the chip. (a) Diagram of VECSEL system; (b) optical field distribution in inner layer of gain chip

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图 2. InGaAs量子阱的子能级分立

Fig. 2. Sub-energy-level separation of InGaAs quantum wells

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图 3. 不同光生载流子浓度下InGaAs量子阱的增益光谱

Fig. 3. Gain spectra of InGaAs quantum wells at different carrier concentrations

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图 4. InGaAs量子阱增益光谱对比

Fig. 4. Gain spectrum comparison of InGaAs quantum well

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图 5. VECSEL增益芯片反射谱

Fig. 5. Reflection spectrum of VECSEL gain chip

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图 6. 不同增益芯片温度下,VECSEL输出功率随泵浦功率的变化曲线

Fig. 6. Output power curve of VECSEL with pump power at different gain chip temperatures

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图 7. VECSEL系统输出光束强度的远场分布,插图为输出光斑的二维彩图

Fig. 7. Far field distribution of output beam intensity of VECSEL system, and the inset is 2D color map of output spot

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表 1不同VECSELs在相近波长处的参数对比

Table1. Comparison of parameters at similar wavelength of different VECSELs

Mechanism Types of semiconductor laser Peak power /mW Lasing wavelength /nm Mechanism in Ref.[29] Electrically pumped 0.18 1170 Mechanism in Ref.[30] Electrically pumped 1.53 1180 Mechanism in Ref.[31] Optically pumped 1000 1160 Mechanism in Ref.[32] Optically pumped (QDs gain region) 2.45 1148 Mechanism in Ref.[33] Optically pumped (DBR-free) 2000 1150 Mechanism in Ref.[34] Optically pumped (DBR-free) 2500(two VECSELs) 1160 Proposed mechanism Optically pumped 1023 1160

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张卓, 宁永强, 张建伟, 张继业, 曾玉刚, 张俊, 张星, 周寅利, 黄佑文, 秦莉, 刘云, 王立军. 1160 nm光泵垂直外腔面发射激光器设计及制备[J]. 中国激光, 2020, 47(7): 0701020. Zhang Zhuo, Ning Yongqiang, Zhang Jianwei, Zhang Jiye, Zeng Yugang, Zhang Jun, Zhang Xing, Zhou Yinli, Huang Youwen, Qin Li, Liu Yun, Wang Lijun. Design and Fabrication of 1160-nm Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser[J]. Chinese Journal of Lasers, 2020, 47(7): 0701020.