通过可控的化学腐蚀法完成了对碳化硅量子点的制备，而后经超声空化作用及高速层析裁剪获得水相的碳化硅量子点溶液，利用化学偶联法，一步实现了SiC量子点的表面物化特性调控。通过对制备工艺参数调整前后量子点微观形貌、光谱特性的表征，结果表明：腐蚀次数、腐蚀剂组分及腐蚀剂配比是影响碳化硅量子点光致发光效率的主要因素，调整腐蚀次数与腐蚀剂组分的配比，同时加入偶联剂分析纯硫酸，当以V(HF)∶V(HNO3)∶V(H2SO4)=6∶1∶1(体积比)的组分及比例腐蚀球磨后的β-SiC粉体时，制备出的水相碳化硅量子点光致发光相对强度最为理想。同时对碳化硅量子点表面巯基的形成机制与修饰稳定性进行了初步分析。

Silicon carbide quantum dots (QDs) were prepared by controllable chemical etching method, and then the aqueous solution of SiC QDs were obtained by ultrasonic cavitation and high-speed chromatography, the surface physicochemical properties of SiC QDs were controlled by chemical coupling method. The microstructure and spectral properties of SiC QDs were characterized by adjusting the preparation parameters, the results show that the main factors affect the relative photoluminescence intensity of SiC QDs are corrosion times, composition of corrosive agent and corresive agent components. Adjusting the corrosion times and the proportion of corrosive agent components, then analysis pure sulfuric acid of coupling agent is added, the relative photoluminescence intensity of water-phase SiC quantum dots is the best when V(HF)∶V(HNO3)∶V(H2SO4)=6∶1∶1 is used to corrode the milled β-SiC powder. At the same time, the formation mechanism and modification stability of -SH on the surface of SiC quantum dots are studied and analyzed.