中国激光, 2019, 46 (5): 0503001, 网络出版: 2019-11-11
激光辐射对供体-受体型聚合物忆阻器性能的影响 
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Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor
图 & 表
图 1. 聚合物IPDT的分子结构示意图及其薄膜的紫外可见吸收谱。(a)分子结构示意图;(b)薄膜的紫外可见吸收谱
Fig. 1. Schematic of molecular structure of polymer IPDT and ultraviolet-visible absorption spectrum of polymer IPDT film. (a) Schematic of molecular structure; (b) ultraviolet-visible absorption spectrum
图 2. 聚合物忆阻器结构。 (a) Al/IPDT/ITO器件的结构示意图;(b)器件剖面的SEM图;(c)聚合物IPDT薄膜的AFM图
Fig. 2. Structural diagram of polymer memristor. (a) Structural diagram of Al/IPDT/ITO device; (b) SEM image of cross-section of device; (c) AFM image of polymer IPDT film
图 3. 器件性能。(a) Al/IPDT/ITO器件的I-V 曲线,插图为-3~3 V范围内器件的I-V 曲线;(b)器件的稳定性测试结果
Fig. 3. Device performances. (a) I-V curve of Al/IPDT/ITO memristor, and inset indicating I-V curve of device from -3 V to 3 V; (b) stability test results of device
图 4. 器件经632 nm激光照射不同时间后的I-V 曲线。(a) 20 s;(b) 60 s
Fig. 4. I-V curves of device after 632 nm laser irradiation for different time. (a) 20 s; (b) 60 s
图 5. 器件稳定性测试结果。(a) 632 nm激光照射60 s后;(b) 前50次循环测试中HRS和LRS电阻的变化
Fig. 5. Stability test results of device. (a) After 632 nm laser irradiation for 60 s; (b) resistance changes of HRS and LRS in test for first 50 cycles
图 6. 不同波长激光调制后器件的I-V 曲线。(a) 405 nm;(b) 514 nm
Fig. 6. I-V curves of device after modulation by laser with different wavelengths. (a) 405 nm; (b) 514 nm
表 1经632 nm激光照射后器件性能的变化
Table1. Performance change of device after 632 nm laser irradiation
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表 2经不同波长激光照射后器件开/关电压的变化
Table2. Change of ON/OFF voltages of device after laser irradiation under different wavelengths
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袁帅, 董瑞新, 刘汝新, 闫循领. 激光辐射对供体-受体型聚合物忆阻器性能的影响[J]. 中国激光, 2019, 46(5): 0503001. Shuai Yuan, Ruixin Dong, Ruxin Liu, Xunling Yan. Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor[J]. Chinese Journal of Lasers, 2019, 46(5): 0503001.
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