Frontiers of Optoelectronics, 2018, 11 (4): 400–406, 网络出版: 2019-01-10
Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
基本信息
DOI: | 10.1007/s12200-018-0851-8 |
中图分类号: | -- |
栏目: | RESEARCH ARTICLE |
项目基金: | This work was supported by the National Hi-Tech Research and Development Program of China (No. 2008AA1Z207), Natural Science Foundation of Hubei Province, China (No. 2010CDB01606), Fundamental Research Funds for the Central Universities (HUST: 2016YXMS027), Huawei Innovation Research Program (Nos. YJCB2010032NW, YB2012120133, YB2014010026 and YB2016040002), and Scientific Research Foundation for the Returned Overseas Chinese Scholars. |
收稿日期: | 2018-05-29 |
修改稿日期: | -- |
网络出版日期: | 2019-01-10 |
通讯作者: | (yanlizhao@hust.edu.cn) |
备注: | -- |
, , , , , , , , , , , , . Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400–406. Yanli ZHAO, Junjie TU, Jingjing XIANG, Ke WEN, Jing XU, Yang TIAN, Qiang LI, Yuchong TIAN, Runqi WANG, Wenyang LI, Mingwei GUO, Zhifeng LIU, Qi TANG. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400–406.