不同偏置状态下4T-CMOS图像传感器的总剂量辐射效应
马林东, 李豫东, 郭旗, 文林, 周东, 冯婕. 不同偏置状态下4T-CMOS图像传感器的总剂量辐射效应[J]. 红外与激光工程, 2018, 47(10): 1017002.
Ma Lindong, Li Yudong, Guo Qi, Wen Lin, Zhou Dong, Feng Jie. Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions[J]. Infrared and Laser Engineering, 2018, 47(10): 1017002.
[2] Furuta M, Nishikawa Y, Inoue T, et al. A high-speed, high-sensitivity digital CMOS image sensor with a global shutter and 12-bit column-parallel cyclic A/D converters[J]. IEEE Journal of Solid-State Circuits, 2007, 42(4): 766-774.
[3] Shoushun C, Boussaid F, Bermak A. Robust intermediate read-out for deep submicron technology CMOS image sensors[J]. IEEE Sensors Journal, 2008, 8(3): 286-294.
[4] Wang Bo, Li Yudong, Guo Qi, et al. Total dose effects in 0.5 μm CMOS active pixel image sensor[J], Chinese Journal of Luminescence, 2015,36 (2): 242-248. (in Chinese)
[5] Wang Bo, Wen Lin, Li Yudong, et al. Degradation of saturation output of CCD induced by proton, neutron and cobalt-60 irradiation[J]. Infrared and Laser Engineering, 2015, 44(S1): 35-40. (in Chinese)
[6] Bogaerts J, Dierickx B, Mertens R. Random telegraph signals in a radiation-hardened CMOS active pixel sensor [J]. IEEE Transactions on Nuclear Science, 2002, 49(1): 249-257.
[7] Goiffon V, Hopkinson G R, Magnan P, et al. Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology [J]. IEEE Transactions on Nuclear Science, 2009, 56(4): 2132-2141.
[8] Wang X Y. Noise in submicron CMOS image sensors [D]. Delft: Technische Universiteit Delft, 2008.
[9] Hopkins I H, Hopkinson G R. Random telegraph signals from proton-irradiated CCDs[J]. IEEE Transactions on Nuclear Science, 1993, 40(6): 1567-1574.
[10] Hopkins I H, Hopkinson G R. Further measurements of random telegraph signals in proton irradiated CCDs [J]. IEEE Transactions on Nuclear Science, 1995, 42(6): 2074-2081.
[11] Bogaerts J, Dierickx B, Meynants G, et al. Total dose and displacement damage effects in a radiation-hardened CMOS APS[J]. IEEE Transactions on Electron Devices, 2003, 50(1): 84-90.
[12] Nuns T, Quadri G, David J P, et al. Measurements of random telegraph signal in CCDs irradiated with protons and neutrons [J]. IEEE Transactions on Nuclear Science, 2006, 53(4): 1764-1771.
马林东, 李豫东, 郭旗, 文林, 周东, 冯婕. 不同偏置状态下4T-CMOS图像传感器的总剂量辐射效应[J]. 红外与激光工程, 2018, 47(10): 1017002. Ma Lindong, Li Yudong, Guo Qi, Wen Lin, Zhou Dong, Feng Jie. Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions[J]. Infrared and Laser Engineering, 2018, 47(10): 1017002.
PDF全文
