光电工程, 2006, 33 (6): 37, 网络出版: 2007-11-14   

不同氧分压下电子束蒸发氧化锆薄膜的特性

Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure
作者单位
1 深圳大学,理学院,应用物理系,广东,深圳,518060
2 中国科学院上海光学精密机械研究所,光学薄膜技术研究与发展中心,上海,201800
3 中国科学院上海光学精密机械研究所,光学薄膜技术研究与发展中心,上海,201800??br>
引用该论文

张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. 不同氧分压下电子束蒸发氧化锆薄膜的特性[J]. 光电工程, 2006, 33(6): 37.

张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37.

参考文献

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[2] SHAO S Y,FAN Z X,SHAO J D,et al.Evolutions of residual stress and microstructure in ZrO2 thin films deposited at different temperatures and rates[J].Thin solid films,2003,445(1):59-62.

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[8] HOLGADO J P,GALINDO R E,VEEN A V,et al.Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition[J].Nuclear Instruments and Methods in Physics Research B,2002,194(3):333-345.

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张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. 不同氧分压下电子束蒸发氧化锆薄膜的特性[J]. 光电工程, 2006, 33(6): 37. 张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37.

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