不同氧分压下电子束蒸发氧化锆薄膜的特性
张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. 不同氧分压下电子束蒸发氧化锆薄膜的特性[J]. 光电工程, 2006, 33(6): 37.
张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37.
[2] SHAO S Y,FAN Z X,SHAO J D,et al.Evolutions of residual stress and microstructure in ZrO2 thin films deposited at different temperatures and rates[J].Thin solid films,2003,445(1):59-62.
[4] LEVICHKOVA M,MANKOV V,STARBOV N,et al.Structure and properties of nanosized electron beam deposited zirconia thin films[J].Surface and coating technology,2001,141(1):70-77.
[5] . High-rate reactive sputter deposition of zirconium dioxide[J]. J.Vac.Sci.Technol,A, 1988, 6(6): 3088-3097.
[6] YOON Y S,KIM J S,CHOI S H.Structural and electrochemical properties of vanadium oxide thin films grown by d.c.and r.f.reactive sputtering at room temperature[J].Thin Solid Films,2004,460(1-2):41-47.
[7] Young Wook CHOI,Jeehyun KIM.Reactive sputtering of magnesium oxide thin film for plasma display panel applications[J].Thin Solid Films,2004,460(1-2):295-299.
[8] HOLGADO J P,GALINDO R E,VEEN A V,et al.Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition[J].Nuclear Instruments and Methods in Physics Research B,2002,194(3):333-345.
[9] ALVISI M,TOMASI F D,PERRONE M R,et al.Laser damage dependence on structural and optical properties of ion-assisted HfO2 thin films[J].Thin solid films,2001,396 (1-2):44-52.
[10] 吴自勤,周兵.薄膜生长[M].北京:科学出版社,2001.WU Zi-qin,ZHOU Bing.Thin Films Growth[M].Beijing:Science Press,2001.
[11] GAO P T,MENG L J,SANTOS M P,et al.Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by r.f.reactive sputtering[J].Applied Surface Science,2001,173 (1-2):84-90.
张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. 不同氧分压下电子束蒸发氧化锆薄膜的特性[J]. 光电工程, 2006, 33(6): 37. 张东平, 邵淑英, 黄建兵, 占美琼, 范正修, 邵建达. Characters of ZrO2 films deposited by electron beam evaporation at different oxygen partial pressure[J]. Opto-Electronic Engineering, 2006, 33(6): 37.